NTR4501NST1G Allicdata Electronics
Allicdata Part #:

NTR4501NST1GOSTR-ND

Manufacturer Part#:

NTR4501NST1G

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 20V 3.2A SOT23
More Detail: MOSFET N-CH 20V 3.2A SOT23
DataSheet: NTR4501NST1G datasheetNTR4501NST1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.09085
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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NTR4501NST1G is a single N-channel enhancement mode Field Effect Transistor (FET) with fast switching speed, low On resistances and tightly controlled Breakdown Voltage, suitable for use in LED and power circuit design. It can be used in audio, high voltage, high speed switching, high current and high power applications. In this article, we will discuss the application field and working principle of NTR4501NST1G.

First, let\'s discuss the application field of NTR4501NST1G. As we mentioned, this FET is suitable for use in LED and power circuit design. It can be used in high efficiency DC-DC and AC-DC switching power supplies, motor control systems, DC inductive loads, and other medium and low power applications. NTR4501NST1G is also used in audio applications such as AC and DC amplifiers, frequency dividing circuits, cross-over networks, and mandolin pickups.

In addition, NTR4501NST1G can also be used in high voltage applications, such as electrolysis circuits, plasma generators, heating panels and so on. It is also suitable for switching circuits in heavy industry, such as the control of AC motors, power regulation and control of voltage, and other high-power applications. The high temperature stability of this FET and its tight Breakdown Voltage make it especially suitable for these applications.

Next, we will discuss the working principle of NTR4501NST1G. Like other FETs, NTR4501NST1G consists of a source, a drain, and a gate. To turn the FET on, a voltage must be applied to the gate. This voltage will cause a channel to be formed between the source and the drain. When this channel is formed, current is able to flow through the FET, allowing it to conduct electricity.

In addition, the voltage applied to the gate is also responsible for controlling the size of the channel and therefore the amount of current that can flow through the FET. When the voltage applied to the gate is increased, the size of the channel increases, allowing more current to flow through. Likewise, decreasing the voltage applied to the gate decreases the size of the channel and decreases the amount of current that can flow through.

In summary, NTR4501NST1G is a single N-channel enhancement mode FET with various applications including LED and power circuit design, audio applications, high voltage applications, and high power applications. To turn the FET on, a voltage must be applied to the gate, which also controls the size of the channel and therefore the amount of current that can flow through the FET.

The specific data is subject to PDF, and the above content is for reference

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