Allicdata Part #: | NTR4170NT3G-ND |
Manufacturer Part#: |
NTR4170NT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 3.2A SGL SOT23-3 |
More Detail: | N-Channel 30V 480mW (Ta) Surface Mount SOT-23-3 (... |
DataSheet: | NTR4170NT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 480mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 432pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 4.76nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 3.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTR4170NT3G is a single N-channel MOSFET which can be applied for various purposes in the electronic circuit world. The device is made of high performance materials, and it can also be used in small electronic powered devices.
This device is ideal for applications like switch mode power supply, battery charger, MOSFET switching and voltage regulators. It generally provides high-efficiency performance even at low gate drive requirements and has an excellent switching ability. Additionally, it has a high breakdown voltage for reliable operation over a wide range of conditions.
The device has a four-terminal structure composed of the source, gate, drain and body connection. It is available in different options, including the 90V, 30V, and 30V P-channel options.
The NTR4170NT3G uses a vertical DMOSFET structure in which it is made up of two N-channel MOSFETs with a shared gate connection. The two MOSFETs are connected in series with the gate of one connected to the source of the other. By doing so, the NTR4170NT3G outputs an internal logical level, depending on its gate source threshold voltage.
The NTR4170NT3G is designed to operate as a variableresistor and it works on the principle of applying variablegate-source voltage. This variable voltage produces changes in current flow through the MOSFET which is proportional to the voltage applied. By connecting the MOSFET between the source and drain, the voltage is dependant on the drain current.
The device has a maximum drain current of 4A and can move up to 3.3V at a gate voltage of 1.5V. It is also able to operate in temperatures ranging from 0to 85°C. That makes it an excellent choice for applications that require both cost-effectiveness and reliable operation in cold and hot temperatures.
Overall, the NTR4170NT3G is a highly versatile MOSFET which can be applied for many applications in the electronics and industrial sectors. The device provides high efficiency performance and excellent switching capabilities. Additionally, it has a high-breakdown voltage, making it reliable for a wide range of conditions.
The specific data is subject to PDF, and the above content is for reference
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