NTR4503NT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTR4503NT1GOSTR-ND |
Manufacturer Part#: |
NTR4503NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 1.5A SOT-23 |
More Detail: | N-Channel 30V 1.5A (Ta) 420mW (Ta) Surface Mount S... |
DataSheet: | NTR4503NT1G Datasheet/PDF |
Quantity: | 6000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 420mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTR4503NT1G is a low voltage, N-Channel MOSFET integrated gate-drive MOSFET control circuit. It is designed to provide a robust, efficient and reliable power control solution in applications not designed for extreme temperature operation. The device is intended for use with a variety of high-temperature environment applications, such as motor drives, industrial automation, power supplies and lighting.
The NTR4503NT1G is based on a unique floating gate technology that combines a low-voltage MOSFET control circuit with a high-performance gate drive circuit. The integrated gate-drive circuit reduces the number of components and enables high current levels to be supported. The device is designed for operation in high-temperature environments such as process control and industrial automation. The device provides a high-efficiency solution for controlling power in a variety of applications.
The NTR4503NT1G is designed to control the power to a load using a single MOSFET. The NTR4503NT1G contains a switching MOSFET with an integrated gate-drive circuit that is preconfigured to accurately drive the gate of the MOSFET. The gate-drive circuit is protected against voltage/current excursions, making it suitable for high-temperature operating applications.
The NTR4503NT1G is designed to work in either D-S or D-C mode. In D-S mode, the MOSFET is used to regulate the voltage across a load. In the D-C mode, the MOSFET is used to effectively control the power to the load. The device has a wide operating range, and can be operated over a large range of temperatures (–40°C to +85°C).
The NTR4503NT1G is designed to provide a robust, efficient and reliable power control solution to a variety of applications. The integrated gate drive and overvoltage protection provide a safe and reliable power control solution in high-temperature environment applications. The device consists of the MOSFET, transconductance amplifier and switching gate, and requires no external components. The MOSFET can be easily reconfigured to different gate voltage levels for different load requirements.
The NTR4503NT1G is a low voltage, N-Channel MOSFET integrated gate-drive MOSFET control circuit intended for use in various high-temperature environment applications. The integrated gate-drive circuit reduces power consumption, and provides a robust, efficient and reliable solution for power control. The device can be operated over a wide range of temperatures (–40°C to +85°C), and has a wide operating range and can be easily reconfigured for different load requirements. The NTR4503NT1G is an ideal solution for use in motor drives, industrial automation, power supplies, and lighting applications.
The specific data is subject to PDF, and the above content is for reference
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