NTR4101PT1H Discrete Semiconductor Products

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The NTR4101PT1H is an increasingly popular Field-Effect Transistor (FET) device. It is a single area FET that offers a great deal of flexibility, making it suitable for a variety of applications.

An FET works by using voltage between the device’s gate and source to allow current to flow through the device. This is the basis of the FET working principle. The NTR4101PT1H is designed to operate as a unipolar FET device, meaning that the current only flows in one direction between the gate and source.

The NTR4101PT1H is mainly designed for use in RF and microwave circuits requiring low-noise and high performance. Its wide range of operating parameters make it suitable for a variety of applications. These include amplifiers, oscillators, mixers, samplers, and impedance matching stages.

The NTR4101PT1H is an exceptionally low-noise device, meaning that it can amplify and transmit signals with little interference. This is due to its low gate-to-source capacitance of 0.3 pF (picofarads). This prevents any interference from affecting the signal.

The main advantage of the NTR4101PT1H over other FETs is its low noise figure. This is especially important for applications that require high linearity, such as video amplifiers and high-power microwave amplifiers. Low noise figure can also help reduce energy consumption in some applications.

The NTR4101PT1H has a low off-state leakage current. This ensures that there is no current flowing through the device when it is not in use. This provides improved power control, which is particularly important for battery-powered applications.

The NTR4101PT1H also offers high gain levels, up to a maximum of 30 dB (decibels). High gain levels increase the efficiency of RF and microwave amplifiers, allowing them to deliver more signal power. This can be especially beneficial in applications where signal strength is critical, such as for cellular communications.

The NTR4101PT1H has a temperature range of 0°C to +85°C, which makes it suitable for a wide range of temperatures. This means that the device can be used in both hot and cold environments without any loss of performance.

In addition to the aforementioned features, the NTR4101PT1H offers excellent drain current and drain voltage ranges. The device can operate at drain currents up to 1.8mA (milliamps), which makes it suitable for low-power applications. The drain voltage range of up to 20 volts makes the NTR4101PT1H suitable for use with logic and other high-voltage circuits.

The NTR4101PT1H is a versatile FET device, offering a great deal of flexibility for a variety of applications. Its low noise figure and wide range of operating parameters make it an ideal choice for RF and microwave circuits, as well as low-power and high-voltage applications.

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