PMPB15XP,115

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The PMPB15XP,115 is a single MOSFET transistor component developed and manufactured by NXP Semiconductors. It is an enhancement-mode, insulated-gate Field Effect Transistor (IGFET) optimized for low-voltage applications. The component has P-channel FET configuration, implying that a negative gate voltage is required to switch on the MOSFET. NXP Semiconductors has manufactured this component using their proprietary 45V DMOS technology, and the component is in production since 2002.

The PMPB15XP,115 component is used in several applications in the consumer electronics market such as battery-powered systems, set-top boxes, digital still cameras, and ultra-low power portable devices. It provides manufacturers of these applications with several advantages, such as improved switch time, low gate drive, and better lead length matching. Its low total gate charge is one of its major advantages, which makes it the MOSFET of choice for many manufacturers in low-voltage applications.

The PMPB15XP,115 operates on voltages as low as 0.5V and with gate drive as low as 1.6V. It provides fast switching times through its low RDSon (On-state resistance) of only 10 ohms, and its very low threshold voltage makes it suitable for use in low-voltage applications. The peak forward current of this component is -6.2A, and its drain current is -2.5A. The operating temperature for this component ranges from -55 ⁰C to +150 ⁰C.

The working principle of PMPB15XP,115 is based on the biasing of its N-channel MOSFET. A biasing voltage is applied between the source and the drain, creating a conductive channel of electrons between the two. This flow of electrons is controlled by voltage applied to the gate. When a negative voltage is applied to the gate, the source-drain connection’s resistance decreases, allowing current flow through the transistor. When the gate voltage is set to 0V, the connection is fully OFF. This is the basic working principle of the MOSFET.

The PMPB15XP,115 is a perfect choice for low-voltage applications as it provides good performance with a low voltage operation and fast switching speeds. It is a reliable and cost-effective solution for designs which requires robust MOSFET performance in an ultra-low power device. It is widely available from NXP semiconductor and its distributors.

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