Allicdata Part #: | 568-10816-2-ND |
Manufacturer Part#: |
PMPB20UN,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 20V 6.6A 6DFN |
More Detail: | N-Channel 20V 6.6A (Ta) 1.7W (Ta), 12.5W (Tc) Surf... |
DataSheet: | PMPB20UN,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 6.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 6.6A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.1nC @ 4.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 460pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1.7W (Ta), 12.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-DFN2020MD (2x2) |
Package / Case: | 6-UDFN Exposed Pad |
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A PMPB20UN,115 is a type of field effect transistor (FET) specifically known as a Metal Oxide Semiconductor FET (MOSFET). A MOSFET is a type of single gate field effect transistor that acts as an electronically controlled switch. It is used in digital and analog circuits due to its low power consumption, high input impedance, and small size. MOSFETs are also capable of operating at very high frequencies, allowing them to amplify digital and analog signals.
The PMPB20UN,115 is a n-channel depletion-type MOSFET, meaning that it is designed to be used in depletion-mode circuits. This type of MOSFET is usually operated by means of a gate voltage that polarizes the semiconductor junction between the source and the channel, depleting the channel\'s charge carriers. The resulting channel resistance depends on the electric field between the gate and the channel, which is controlled by the gate voltage.
The PMPB20UN,115 is designed for low voltage applications. It typically operates at a gate voltage of 15V and a drain-source voltage of 20V. The device is classified as a low power MOSFET, meaning that it is suitable for applications that require minimal power consumption, such as the control of a small motor or relay. Its low power consumption also makes it ideal for integrated circuit applications, as it can help improve the reliability of the circuit. It is also suitable for switch mode power supplies, as it can help reduce the ripple produced by the power circuit.
The PMPB20UN,115 has a maximum operational frequency of 30MHz, meaning it is capable of amplification and switching large bandwidth signals up to 30MHz. This makes it suitable for use in radio frequency (RF) amplifiers, as well as other applications that require high-frequency switching. It is also a good choice for audio applications, as it can help minimize noise generated by the circuit.
In addition to its low power consumption and high frequency operation, the PMPB20UN,115 also features a low on-resistance of 10 ohms. This low on-resistance allows for low power losses in switching applications, and therefore helps reduce overall power consumption. The device also features a very low leakage current of 6uA, giving it a high input impedance, which helps it to maintain high signal fidelity.
The PMPB20UN,115 is suitable for use in a variety of analog and digital switching applications. It can be used in low-voltage logic control systems, amplifier gain control circuits, RF amplifiers, power supplies, audio systems, and many other applications. In addition, it is also suitable for use with ICs, as its low power consumption and high input impedance contribute to the reliability of the circuit.
The specific data is subject to PDF, and the above content is for reference
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PMPB29XNEAX | Nexperia USA... | 0.11 $ | 1000 | PMPB29XNEA/SOT1220/SOT122... |
PMPB15XN,115 | Nexperia USA... | 0.12 $ | 1000 | MOSFET N-CH 20V 7.3A 6DFN... |
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