PMPB48EP,115

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	DFN2020MD-6
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.7W (Ta), 12.5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	860pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	26nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	50 mOhm @ 4.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	4.7A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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PMPB48EP,115 Application Field and Working Principle

The PMPB48EP,115, better known as the Power Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET), is a commonly used power MOSFET. It is often used in the automotive, computing and industrial sectors. It is a high-performance device which can handle a wide range of applications and is used in various different mediums.MOSFET or metal-oxide-semiconductor field-effect transistor is a three-terminal semiconductor device. It is mainly used for switching practices and amplification. It operates by using a voltage to control the resistance and current flow between the source and the drain, a process which is known as voltage-controlled resistance. This device is often used as a replacement for transistors which have been traditionally used for various applications because of the better speed, control and flexibility in voltage-controlled applications that it provides. The PMPB48EP,115 uses a 48 V N-channel MOSFET, meaning that it is a p-type MOSFET which uses negative charge carriers, like electrons, to transport the current. When discussing an application field, the PMPB48EP,115 can mainly be used as a power MOSFET in the automotive industry, such as in fuel injectors, ignition coils and relays. It is often used in the primary and secondary ignition circuit. In the computing industry, it can be used for data storage and can also be used in switching applications for high-frequency and low-voltage operations in various computing circuits. In the industrial sector, it can be used in various applications, such as in electric heating, robotic control and AC power, among many others. When it comes to the working principle of the PMPB48EP,115, it involves four main sections. Firstly, the Gate receives a voltage from the Gate Driver, which is then used to control the voltage which is applied between source and drain. Once the voltage has been applied, the current flows between the source and the drain. Once current has passed through the Gate, it then goes to the Gate Terminal, where resistance is calculated and ideally, the Gate Terminal should be grounded. The Gate Driver is the device which controls the current flow and brings the Gate Terminal level to the ideal condition. When power passes through the PMPB48EP,115, it undergoes a process known as ‘hope shift’, where it is shifted to the Drain Terminal of the MOSFET. This process keeps the current flow at a stable level, as the thickness of the silicon dioxide (SiO2) layer between the Gate Terminal and the Drain Terminal is kept constant. This ensures that the PMPB48EP,115 can be safely used for various mediums and applications. Overall, the PMPB48EP,115 can be used in various applications, ranging from automotive to computing and industrial sectors. It is mainly used in the automotive industry for primary and secondary ignition circuits, as a power MOSFET. In the computing industry, it is mainly used for data storage, as well as switch applications in computing systems. In terms of industrial applications, the PMPB48EP,115 can be used for electric heating, robotics control and AC power. It has a working principle which involves the Gate Driver controlling the current flow and the ‘hop shift’ process, which shifts the power to the Drain Terminal, ensuring that the PMPB48EP,115 can be safely used for its various applications.

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