PMPB11EN,115

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The PMPB11EN,115 is a single-gate logic-level metal-oxide-semiconductor field-effect transistor (MOSFET) from NXP Semiconductor. It is designed for high-performance yet cost-sensitive applications.

The PMPB11EN,115 has an active gate structure, which means it can switch at higher speeds and lower power consumption than a passivate gate device, even when switching at low gate voltage. It also has an integrated Schottky diode to provide protection against lead inductive-ringing and transient surge-inrush protection.

The device is capable of passing current in two directions, allowing it to be used in any circuit configuration. The device is capable of self-latching to the voltage supplied to its gate, ensuring that the device is always operating with proper level-shifting and temperature compensation. This also makes it compatible with higher-speed logic circuits and microcontrollers.

The PMPB11EN,115 is available in different packages varying from TO-92 to DPAK, each with slightly different electrical characteristics. This variation allows designers to select the optimal transistor for their particular application needs. For example, the TO-92 package has a robust thermally enhanced design for high-speed operations, while the DPAK package has been designed for higher current ratings.

The PMPB11EN,115 offers a working voltage range of 3.8 V to 18 V, with a maximum power dissipation of 700 mW. Its maximum drain-source breakdown voltage is 25 V, while its typical gate-source threshold voltage is -2.2 V (-2.7 V max). Its on-resistance is typically 5 Ω at VGS = 4.5 V (3.2 V max).

The PMPB11EN,115 offers a working range of temperatures between -55 °C and 175 °C, making it suitable for a variety of applications, including automotive and industrial. It also has an electrostatic discharge (ESD) protection of 2 kV.

The PMPB11EN,115 is designed to be used in load-switch and level-shift circuits, as well as driver circuits for low power DC motors, solenoids, relays, LEDs and other loads. The device can also be used for battery protection, to provide over-voltage and over-current protection. Additionally, it can be used in hot-swap applications, where it is able to replace mechanical switches.

The PMPB11EN,115 works on a basic principle of gate control. When a positive voltage is applied to the gate, the device is "on", allowing current to flow between the drain and source. Conversely, when a negative voltage is applied, the device is "off", blocking current conduction between the two terminals. The amount of current that can be passed through the device is determined by the gate-source voltage and the value of the load itself.

Overall, the PMPB11EN,115 is an ideal choice for any cost-sensitive and high-performance application where a simple, single-gate field-effect transistor is needed. With its wide working range temperature, excellent on-resistance, and low switching threshold, it provides the power and reliability necessary to meet demanding applications.

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