Allicdata Part #: | 568-10451-2-ND |
Manufacturer Part#: |
PMPB12UN,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 20V 7.9A 6DFN |
More Detail: | N-Channel 20V 7.9A (Ta) 1.7W (Ta), 12.5W (Tc) Surf... |
DataSheet: | PMPB12UN,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | 6-DFN2020MD (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.7W (Ta), 12.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 886pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 7.9A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 7.9A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PMPB12UN,115 transistor is one of the most widely used transistors available today and is used across a wide range of applications. This transistor belongs to the family of Field Effect Transistors (FETs) and is a single channel MOSFET. The PMPB12UN,115 is a robust and reliable device, making it the go-to choice for many applications.
The PMPB12UN,115 has two main applications: the amplification of small signals and the implementation of switching functions.
For small signal amplification, the PMPB12UN,115 can provide a voltage gain of up to 100 times. This means that the transistor is able to amplify small input signals such as audio and radio frequencies into signals of useful amplitude. This makes the PMPB12UN,115 ideal for use in amplifiers and audio equipment.
The PMPB12UN,115 is also able to efficiently implement switching functions such as power supplies, logic circuits, and voltage regulators. This is due to the transistor’s low “on” resistance, which makes it able to efficiently dissipate large amounts of power. The PMPB12UN,115 is also able to handle high voltages, up to 20 Volts, making it a versatile choice for a wide range of switching functions.
The PMPB12UN,115 operates according to the principle of a field-effect transistor through the application of a voltage between the source and the drain. This creates an electric field which modulates a thin insulating layer between the source and the drain, allowing current to flow from the source to the drain. The transistor is able to control the current passing between the source and the drain by the application of either a positive or negative gate voltage.
In summary, the PMPB12UN,115 is a highly versatile transistor that can be used for a wide range of applications. Its two primary applications are in small signal amplification and implementation of switching functions, due to its low “on” resistance and ability to handle high voltages. The PMPB12UN,115 operates according to the field-effect principle, which is triggered by applying a voltage between the source and the drain, which can be modulated by a positive or negative gate voltage.
The specific data is subject to PDF, and the above content is for reference
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