PMPB95ENEAX

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The PMPB95ENEAX is a field effect transistor (FET) designed for surface mount applications and manufactured by ON Semiconductor. This device is a single, N-channel silicon junction FET specifically designed for applications ranging from low-power amplifiers to switching circuits. It comes in a TO-263 package rated for operation up to 100 volts.

The FET is characterized by its low rDS(on) resistance, which is the resistance of the channel when the gate voltage is applied. This is an important parameter when selecting FETs for low-power applications because the lower the rDS(on) resistance, the lower the power dissipation. For this reason, the PMPB95ENEAX is well suited for low-power amplifiers and switching circuits, as it has an rDS(on) resistance of just 0.008 Ω.

The FET architecture used in the PMPB95ENEAX is known as a metal oxide semiconductor FET (MOSFET). This type of device uses a metal oxide gate insulator to control the current flow between the source and drain of the device. The PMPB95ENEAX can be used as either an enhancement mode or a depletion mode FET, depending on the voltage applied to the gate terminal. In enhancement mode, the PMPB95ENEAX will pull the output voltage towards the drain voltage when a positive voltage is applied to the gate terminal. Conversely, in depletion mode, a negative voltage applied to the gate terminal will cause the output voltage to move away from the drain voltage.

The PMPB95ENEAX is also characterized by its low gate capacitance, which is the capacitance between the gate and channel of the device. This parameter is important when selecting FETs for high speed switching applications because the lower the gate capacitance, the lower the switching time. The PMPB95ENEAX has a gate capacitance of just 0.03 pF, making it well suited for high speed switching applications.

Finally, the PMPB95ENEAX is also characterized by its low gate-to-source leakage current. This parameter is important when selecting FETs for power management applications because it determines the amount of current that can pass between the gate and source of the device. The PMPB95ENEAX has a very low gate-to-source leakage current of just 0.01 µA, making it well suited for power management applications where current leakage needs to be minimized.

In summary, the PMPB95ENEAX is a single, N-channel MOSFET designed for low-power applications such as amplifiers and switching circuits. It can be used as either an enhancement mode or a depletion mode FET, depending on the gate voltage applied. Furthermore, it is characterized by its low rDS(on) resistance, low gate capacitance, and low gate-to-source leakage current, making it well suited for a wide range of applications.

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