PMPB20XPE,115 Allicdata Electronics
Allicdata Part #:

1727-1368-2-ND

Manufacturer Part#:

PMPB20XPE,115

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET P-CH 20V 7.2A SOT1220
More Detail: P-Channel 20V 7.2A (Ta) 1.7W (Ta), 12.5W (Tc) Surf...
DataSheet: PMPB20XPE,115 datasheetPMPB20XPE,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.10161
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Vgs(th) (Max) @ Id: 900mV @ 250µA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020MD-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 7.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PMPB20XPE,115 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) which is also commonly referred to as a single-gate FET (Field Effect Transistor). It is a three-terminal switching device that is used in a wide array of applications, including amplifiers, logic circuits, power switches, and various other types of switching circuits. While the device is named after the manufacturer, the PMPB20XPE is the specific model number and “115” refers to the voltage rating.

Due to its small size, low power consumption, and high switching speed, the PMPB20XPE is commonly used in a variety of areas, including automotive and industrial applications. Its performance characteristics also make it an ideal choice for applications where high reliability and low noise are required, such as in the aerospace industry.

The PMPB20XPE is a symmetric N-channel MOSFET and is powered through a +15V gate-source voltage and from an external negative voltage. The gate-source voltage commonly ranges from -4V to +15V, and the drain current can range from 2A to 12A, depending on the specific model. The device also offers a wide frequency range from 0 Hz to 6.1 GHz, meaning it is suitable for higher-frequency applications such as radio-frequency (RF) circuits.

The PMPB20XPE is a unipolar device and operates by having a metal-oxide gate insulator placed between the metal gate electrode and the semiconductor channel. This gate structure allows the gate voltage to control the conductivity of the channel. When a positive voltage is applied to the gate, an electric field is created that attracts free electrons and results in current flow (drain-source). When a negative voltage is applied to the gate, electrons are repelled, which blocks current flow. As such, the PMPB20XPE can be used to switch power from the drain to the source or vice versa.

The PMPB20XPE is typically used in switching applications such as power MOSFETs, voltage regulators, and DC-DC converters. It offers exceptional performance in terms of drain current, drain-source capacitance, and Power Dissipation. Additionally, the device has a low body capacitance, which helps reduce noise produced in the circuit.

In summary, the PMPB20XPE is an N-channel MOSFET designed for use in a variety of application fields, including automotive, industrial, and aerospace applications, where high reliability and low noise are required. It is a three-terminal switching device powered by a gate-source voltage, with a wide drain current range of 2A to 12A, depending on the specific model. The device also offers a wide frequency range of 0Hz to 6.1 GHz and has a low body capacitance which helps reduce noise.

The specific data is subject to PDF, and the above content is for reference

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