Allicdata Part #: | PMPB20ENZ-ND |
Manufacturer Part#: |
PMPB20ENZ |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 7.2A 6DFN |
More Detail: | N-Channel 30V 7.2A (Ta) 1.7W (Ta), 12.5W (Tc) Surf... |
DataSheet: | PMPB20ENZ Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.07890 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | DFN2020MD-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.7W (Ta), 12.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 435pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 19.5 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMPB20ENZ is a semiconductor field effect transistor (FET) designed for use in a variety of electronic applications. It is a single-gate type of FET which is manufactured in the N-channel MOSFET technology and has a drain-source voltage rating of 20 volts. The device is widely used in the design of power switch and amplifier stages, motor control, audio-video systems, and other high voltage applications.
A FET consists of three terminals - the gate, source and drain. In a PMPB20ENZ, these terminals are connected internally to a semiconductor substrate. The gate is the control terminal through which a control voltage can be applied to change the current flow in the device. The source and drain are electrodes through which the current passes when it is turned on.
The PMPB20ENZ is a low-power FET that can be used in frequency-related applications, such as frequency-controlled amplifiers and other audio-video systems. It can also be used as a power switch in motor control applications and as a power amplifier stage. When used as a power switch, it is capable of switching large currents with high efficiency at moderate voltages, making it an ideal choice for motor control.
The PMPB20ENZ is manufactured using the N-channel MOSFET technology, which provides superior performance compared to other types of FETs. The device has a low on-state resistance, which makes it ideal for applications that require low-voltage operation. It also has a low off-state leakage current and can be used in applications that require high-frequency switching. In addition, the device has a high speed of switching, which makes it suitable for high-speed switching applications.
The working principle of the PMPB20ENZ FET is the same as any other FET. When a gate voltage is applied to the gate terminal, a current is allowed to flow through the source and drain terminals. The amount of current allowed to flow depends on the gate voltage, which controls the current flow by making the device either partially or completely conductive. If the gate voltage is lowered, the current decreases, and if it is increased, the current increases.
The PMPB20ENZ is a versatile device that can be used in a variety of applications. It can be used as a power switch or in frequency-related applications. It is also suitable for motor control, audio-video systems, and other high voltage applications. Its low on-state resistance and low leakage current make it perfect for use in low-voltage applications, while its high switching speed makes it suitable for high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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