Allicdata Part #: | 1727-1240-2-ND |
Manufacturer Part#: |
PMPB33XP,115 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 20V 5.5A 6DFN |
More Detail: | P-Channel 20V 5.5A (Ta) 1.7W (Ta), 12.5W (Tc) Surf... |
DataSheet: | PMPB33XP,115 Datasheet/PDF |
Quantity: | 12000 |
3000 +: | $ 0.09563 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | DFN2020MD-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.7W (Ta), 12.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1575pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 37 mOhm @ 5.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PMPB33XP,115 is a single, discrete, transistor device in the form of a MOSFET also known as an MOSFET or FET. It is used in a number applications as it is highly reliable and efficient, as well as cost-effective, when compared to its alternatives. As a result, it is a common choice amongst engineers and designers.
The PMPB33XP,115 is a surface-mount device (SMD) that is made of a single component and is suitable for use on most printed circuit boards (PCBs). It is a p-channel and is composed of many layers of thin slices of silicon, forming a field effect control layer, ohmic contact layers, gate and source, and other layers. The component is also protected by a dielectric and a passivating layer.
The PMPB33XP,115 operates on the principle of a MOSFET, which is the physical phenomenon in which electrons move from the source to the drain due to the differences in electric current applied to the gate and source. As the current increases, the electric potential at the source decreases, effectively increasing the amount of current that can flow from the source to the drain. This phenomenon is described by the device’s transconductance, which is a measure of the gain or loss of current relative to the gate and source differential currents, as a function of temperature.
The PMPB33XP,115 is used in a wide range of applications, including power management, power conversion, signal conditioning, motor control and audio amplification. It is also commonly used in motor drivers and relay switches, as it can be easily switched on or off with the application of an external voltage. In the case of signal conditioning applications, it is used to convert digital signals into analog signals or vice versa, while in the case of motor control, it is used to regulate and monitor the speed of the motor.
The PMPB33XP,115 provides a host of advantages for its users. It is a low-cost solution for power management and control applications as it does not require additional components for operation. Additionally, the PMPB33XP,115 offers excellent noise performance, making it suitable for high-frequency applications. The device is also very efficient and requires little power to operate, which makes it particularly suitable for use in battery-powered applications. The device is also highly reliable, as it operates over a wide temperature range and is not easily damaged by thermal stress.
In conclusion, the PMPB33XP,115 is a reliable, efficient and cost-effective single transistor device that is used in a variety of applications. It operates on the principle of a MOSFET and is composed of many layers of thin slices of silicon. It is used in a wide range of applications, including power management, power conversion, signal conditioning, motor control and audio amplification. The device provides excellent noise performance and requires very little power to operate as well as being highly reliable. The PMPB33XP,115 is therefore a worthy choice for any application.
The specific data is subject to PDF, and the above content is for reference
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PMPB16XNEAX | Nexperia USA... | 0.0 $ | 1000 | PMPB16XNEA/SOT1220/SOT122... |
PMPB25ENEAX | Nexperia USA... | 0.0 $ | 1000 | PMPB25ENEA/SOT1220/SOT122... |
PMPB50ENEAX | Nexperia USA... | 0.0 $ | 1000 | PMPB50ENEA/SOT1220/SOT122... |
PMPB20XNEAZ | Nexperia USA... | 0.15 $ | 9000 | MOSFET N-CH 20V SOT1220N-... |
PMPB29XPEAX | Nexperia USA... | -- | 1000 | PMPB29XPEA/SOT1220/SOT122... |
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PMPB30XPEX | Nexperia USA... | 0.09 $ | 1000 | PMPB30XPE/SOT1220/SOT1220 |
PMPB20EN,115 | Nexperia USA... | 0.1 $ | 1000 | MOSFET N-CH 30V 7.2A 6DFN... |
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PMPB43XPEAX | Nexperia USA... | 0.11 $ | 1000 | PMPB43XPEA/SOT1220/SOT122... |
PMPB48EPAX | Nexperia USA... | 0.11 $ | 1000 | PMPB48EPA/SOT1220/SOT1220... |
PMPB15XPH | Nexperia USA... | -- | 1000 | MOSFET P-CH 12V 8.2A 6DFN... |
PMPB15XPZ | Nexperia USA... | 0.11 $ | 1000 | MOSFET P-CH 12V SOT1220P-... |
PMPB27EPAX | Nexperia USA... | 0.11 $ | 1000 | PMPB27EPA/SOT1220/SOT1220... |
PMPB29XNEAX | Nexperia USA... | 0.11 $ | 1000 | PMPB29XNEA/SOT1220/SOT122... |
PMPB15XN,115 | Nexperia USA... | 0.12 $ | 1000 | MOSFET N-CH 20V 7.3A 6DFN... |
PMPB19XP,115 | Nexperia USA... | 0.12 $ | 1000 | MOSFET P-CH 20V 7.2A 6DFN... |
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