Allicdata Part #: | PMPB43XPEAX-ND |
Manufacturer Part#: |
PMPB43XPEAX |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | PMPB43XPEA/SOT1220/SOT1220 |
More Detail: | P-Channel 20V 5A (Ta) 1.7W (Ta), 12.5W (Tc) Surfac... |
DataSheet: | PMPB43XPEAX Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.09433 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | DFN2020MD-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.7W (Ta), 12.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1.55nF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 23.4nC @ 4.5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 48 mOhm @ 5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMPB43XPEAX transistors are field-effect transistors, a type of transistor that utilizes an electric field to control the shape and hence the conductivity of a semiconductor material. It is most commonly used in building amplifiers, oscillators, and other electronic circuits such as switching and automotive applications. This transistor is similar to a field-effect transistor, or FET, and is often referred to as a power MOSFET. Power MOSFETs are typically used in high-power or low-voltage applications.
The main benefit of a PMPB43XPEAX is its high conducting current. This transistor has an operating voltage of up to 800 Volts and a continuous drain current of up to 11 Amperes. It offers fast switching speed and a low on-resistance, making it suitable for a wide range of applications. The PMPB43XPEAX can also be used in a variety of applications including automotive, industrial, audio, and RF. It is also suitable for use in high power applications such as motor control and welding.
The PMPB43XPEAX is an enhancement-mode power MOSFET. It consists of an insulated gate, a source and a drain. An insulated gate is formed by a layer of electrically insulating material sandwiched between the source and the drain, allowing it to control the flow of electrons through the channel. When the insulated gate is positively charged, it attracts electrons from the channel, creating a channel between the source and the drain. This channel or path is called the conducting channel. The flow of electrons through the conducting channel creates an electric current.
The PMPB43XPEAX operates because, when the proper voltage or current is applied to the insulated gate, an electric field forms, known as the “gate voltage”. This field creates a depletion region in the semiconductor material, where the electric field acts to block the flow of current from the source to the drain. The electrical field can be adjusted by varying the gate voltage, allowing for the current and voltage to be closely controlled. When negative gate voltage is applied, the depletion region disappears and current is able to flow from the source to the drain. When the FET is off, all current is blocked.
The PMPB43XPEAX can be used in a variety of ways in both industrial and commercial applications. It can be used in motor controllers, amplifier circuits, switching applications, and power supplies. It is suitable for a wide range of applications due to its low on-state resistance, fast switching speed, and high current capabilities. PMPB43XPEAX can also be used in audio applications such as amplifiers, oscillators, and other electronic circuits. It is also suitable for use in automotive applications such as fuel pumps, ignition systems, and exhaust systems.
The PMPB43XPEAX is a field-effect transistor that functions by controlling the flow of electrons between its source and drain. It operates by applying a positive or negative gate voltage to the insulated gate, creating a depletion region in the semiconductor material. The source and drain configuration of the PMPB43XPEAX allows for it to be used in a variety of applications including automotive, industrial, audio, and RF. Additionally, its low on-state resistance, fast switching speed, and high current capabilities make it suitable for use in high-power applications. Although this transistor has some limitations in regards to its voltage and temperature requirements, these problems can be overcome by smart circuit design.
The specific data is subject to PDF, and the above content is for reference
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