PMPB48EPAX

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The PMPB48EPAX is a single N-channel, logic-level Power MOSFET with an integrated body diode. It is a high voltage, wide choice of operating conditions, and low on-state resistance. It could be used into a wide range of applications that include DC-DC converters, Portable Electronics, UPS, Solar and Renewable Energy, and Industrial Automation.

The PMPB48EPAX has a typical drain-to-source breakdown voltage (Vds) of 530V and an avalanche rated drain-to-source breakdown voltage of 1150V. Its channel temperature is -55°C to 175°C, and its gate charge (Qg) is 18nC. It has a low on-state resistance (Rds(on)) of 0.0045 ohm. This MOSFET can handle a continuous drain current (Id) of up to 37A in a surface mount SO-8 package.

The PMPB48EPAX has a high level of protection from electro-static discharge (ESD). Its ESD protection is guaranteed to exceed 2KV for the human body model (HBM). Its leads are also protected from welding. When this MOSFET is coupled with the XLSFT1250BH power stage, it is capable of delivering up to 290 Watts into a load with 20MHz of bandwidth.

This device is designed mainly for high-side switching applications. It has a low Rds(on) of 0.0045 ohm and high maximum drain current of 37A. The PMPB48EPAX is best suited for applications such as pulse width modulation (PWM) DC-DC converters, switching power supplies, and lighting control.

The PMPB48EPAX features a logic-level gate threshold voltage. This means that the gate voltage can be driven low enough to fully turn on the MOSFET, even when the drain is connected directly to a high voltage source. This allows for many power and control possibilities, especially when compared to standard MOSFETs with a higher gate threshold voltage.

The integrated body diode of the PMPB48EPAX helps to reduce the size and cost of the application system. This is because an additional external body diode does not have to be added, which reduces the number of components required. The integrated body diode also helps to achieve higher efficiency in the application system by reducing the losses incurred with the addition of an external diode.

The main working principle of the PMPB48EPAX is similar to that of other Power MOSFETs. It is composed of three main components, the gate, drain, and source. When the gate voltage is increased beyond the threshold voltage, it causes the device to be turned on and current can flow freely between the source and drain terminals. When the gate voltage is decreased below the threshold voltage, it causes the device to be turned off and the current flow stops.

The PMPB48EPAX is a popular choice for high voltage, high power applications due to its high drain-to-source breakdown voltage and low on-state resistance. It is also highly flexible, with a wide range of operating conditions and a programmable logic-level gate threshold voltage. This makes it suitable for a variety of power and control tasks, particularly those involving high frequency switching and/or currentizing. The integrated body diode further enhances its applicability, making it suitable for applications where a low part count and high efficiency are paramount.

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