PMPB29XPE,115 Discrete Semiconductor Products

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The PMPB29XPE,115 is a single, unipolar N-channel enhancement mode field-effect transistors (FETs) designed for maximum versatility and convenience in low-powered applications. This FET is suitable for switching duties with low drift, as well as dynamic applications operating at high board levels. It is also effective for using in voltage-controlled analog signal processing applications such as gear-level and logic-level amplifiers, and for loads of medium-high power.

Features

The PMPB29XPE,115 has many benefits and features that make it an ideal choice for many electronic applications. This FET\'s drain current is rated at 500mA, and it has a drain-to-source voltage (VDS) rating of 75 Volts. It also features a low RDS(on) of 100 mOhms. This FET also has a high amplifier voltage gain of approximately 105dB, which makes it extremely versatile in analog and digital applications. Additionally, the PMPB29XPE,115 features high noise immunity and high breakdown voltage ratings, making it suitable for use in multiple voltage applications.

Applications

The PMPB29XPE,115 is suitable for applications such as voltage-controlled amplifiers, pulse-width modulators, flat panel displays, switching power supplies and automotive electronics. This single FET is also used in various applications such as analog signal processing, gear-level and logic-level amplifiers, high-power loads and dynamic applications, as well as low-powered switching duties. It is also used in low-distortion solutions, static and dynamic analog circuits, and DC-DC converters. The PMPB29XPE,115 is also very effective in systems requiring high-speed operation, high-density solutions and robust, reliable operation.

Working Principle

The PMPB29XPE,115 is a unipolar N-channel enhancement mode FET. This FET is a voltage-operated device, meaning that the drain current is controlled by the gate-source voltage (VGS). This voltage is applied to the FET gate, and this causes the electrons to gain enough energy to cross the FET channel. As the gate voltage increases, the current flowing through the FET channel (ID) also increases. The amount of current flowing through the FET is directly proportional to the gate-source voltage, and inversely proportional to the channel resistance (RDS). The FET channel resistance (RDS) is also controlled by the gate voltage, so as the voltage applied to the gate increases, the channel resistance will decrease and the drain current will increase.

Conclusion

The PMPB29XPE,115 is a single, unipolar N-channel enhancement mode field-effect transistor (FET). This FET is suitable for a wide range of applications, and is ideal for low-power switching duties and high-powered load applications. It is also effective for using in voltage-controlled analog signal processing applications such as gear-level and logic-level amplifiers. The PMPB29XPE,115 offers maximum versatility and convenience with its high amplifier voltage gain of approximately 105dB, low RDS(on) of 100 mOhms, and its drain current rating of 500mA. This FET is also ideal for low-distortion solutions, static and dynamic analog circuits, and DC-DC converters.

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