PMPB55ENEAX

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PMPB55ENEAX is a power Metal-Oxide Semiconductor Field Effect Transistor (MOSFET), rated at 55-volt and 60-amp. It is commonly used in power electronics applications, such as DC motor control or power converters for off-grid power systems. The PMPB55ENEAX is a single-gate device, meaning there is one control signal to drive the FET, rather than a dual-gate MOSFET which requires multiple control signals.The PMPB55ENEAX has a maximum drain-source voltage (VDM) of 55 volts, and a maximum drain-source current of 60 amps. This makes it suitable for medium-power applications. It has a maximum drain-source on-state resistance of 10 milliohms, meaning it can handle medium to high current switching applications.

The main advantage of the PMPB55ENEAX is its compact size. The device is housed in a TO-263 package which requires minimal space on the PCB. This enables a high-density layout, making it ideal for applications where board space is at a premium. As a power MOSFET, the PMPB55ENEAX also has the added benefit of high efficiency and low power dissipation when the device is in saturation. This makes it well suited for switching applications.

The working principle of the PMPB55ENEAX is based on the MOSFET\'s ability to control the current flow between its source and drain. An applied voltage between the gate and source terminals can cause the MOSFET to switch between the off and on states. When the gate is at ground, the MOSFET is off and the drain-source current is zero. When the gate is at a higher voltage than the source, the MOSFET is on, and a drain-source current can flow.

An applied voltage, known as a gate drive, coupled with a larger drain-source voltage is needed to turn the MOSFET on. The voltage required at the gate is usually higher than the drain-source voltage, and is known as the turn-on threshold voltage, or threshold voltage (VTH). The higher the threshold voltage, the greater the required gate drive. The PMPB55ENEAX has a rated threshold voltage of 1.5 volts and requires a gate drive of 6 volts for on state.

The PMPB55ENEAX is a single-gate device and requires only one control signal to drive the FET. However, it is important to note that a good gate drive is needed in order to achieve the full performance of the device. The gate drive should be able to source at least 2 volts above the gate voltage to ensure that the device can be turned on. A gate drive circuit with suitable current capability is needed to provide the required gate drive.

In summary, the PMPB55ENEAX is a single-gate, 55-volt, 60-amp power MOSFET, suitable for medium-power switching applications. It is housed in a compact TO-263 package, has a maximum on-state resistance of 10 mohm, and operating temperature range of -55°C to 175°C. A single control signal and a suitable gate drive circuit are required to achieve the full performance of the device.

The specific data is subject to PDF, and the above content is for reference