PMPB215ENEA/FX

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Introduction:

PMPB215ENEA/FX is a high voltage, low current MOSFET transistor from Bourns. It has a high breakdown voltage, making it ideal for use in power management applications. This small surface mount package is designed for space-critical systems.

Application Field:

The PMPB215ENEA/FX is designed for a wide variety of power management applications, such as motor control, power supply design, and switching applications. It features high voltage, low on-resistance, and a low leakage current, making it well suited for these applications. For example, it can be used as a power switch in an electric vehicle system, as it is able to handle large currents while keeping the power supplied to the battery stable.

Working Principle:

The PMPB215ENEA/FX transistor is a MOSFET, which stands for Metal–Oxide–Semiconductor Field-Effect Transistor. It is a three-terminal-active semiconductor device that is used for switching large currents and voltages. A MOSFET works by controlling the flow of electrons between the source and drain terminals. When a voltage is applied to the gate terminal, it creates an electric field which controls the current flow between the source and drain. With the PMPB215ENEA/FX, the flow is regulated by a high voltage gate resistor.

The PMPB215ENEA/FX is a high voltage MOSFET and is designed to be used in high voltage applications. It has a breakdown voltage of 150V and a maximum gate voltage of 150V. The low on-resistance of the PMPB215ENEA/FX makes it ideal for switching large currents and voltages. This makes it great for power supply and motor control applications.

Conclusion:

The PMPB215ENEA/FX is a high voltage MOSFET from Bourns. It has a breakdown voltage of 150V and a low on-resistance, making it ideal for use in power management applications. It is perfect for switching large currents and voltages in motor control, power supply design, and similar applications.

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