Allicdata Part #: | PMPB50ENEAX-ND |
Manufacturer Part#: |
PMPB50ENEAX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | PMPB50ENEA/SOT1220/SOT1220 |
More Detail: | N-Channel 30V 5.1A (Ta) 1.9W (Ta) Surface Mount DF... |
DataSheet: | PMPB50ENEAX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | DFN2020MD-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.9W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 271pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 43 mOhm @ 5.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.1A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A PMPB50ENEAX is a field effect transistor (FET) designed with a single channel to control the transfer of electrical current between various components in a circuit. It functions by using applied electric fields to create a depletion zone in the transistor\'s base region. The depletion zone is a region within the transistor\'s controllable region where the current is blocked from flowing in either direction. This is due to the lack of electrons and holes created by the depletion effect.
The PMPB50ENEAX can be used in a variety of applications. It is widely used as a voltage regulator due to its high impedance and ability to regulate a wide range of voltages. It can also be used in amplifiers and logic circuits. Additionally, it can be used in radio frequency (RF) applications as a high-frequency mixer or as part of a low-noise amplifier.
The working principle of the PMPB50ENEAX is relatively simple. It operates by using a P-type substrate and N-type source and drain regions. It uses the electric field supplied by the P-type substrate and the five N-type source and drain regions to form a controllable channel between the source and drain regions. When the electric field is applied, it modifies the electrons and holes in the channel, creating a current that controls the devices’ operation.
The PMPB50ENEAX can be used to control a range of electrical currents, from low voltage to high voltage, depending on the application. Its operating range is typically from -1 V to 5 V, although higher voltages may be achieved with the use of an additional power supply. The current flow through the device is controlled by the voltage applied to the gate and the resistance of the channel.
The PMPB50ENEAX is popular amongst engineers due to its low power consumption, small size, and the ability to control high voltage currents. Its applications are wide-ranging, from low-power digital and analog applications to high-power applications, including industrial equipment and robotics.
In short, the PMPB50ENEAX is a single field effect transistor designed with a single channel to control the transfer of electrical current. It is widely used due to its easy application, low power consumption and small size, making it suitable for various applications. The working principle of the PMPB50ENEAX is relatively simple and the current flow is directly controlled by an applied voltage.
The specific data is subject to PDF, and the above content is for reference
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