PMPB30XPEX Allicdata Electronics
Allicdata Part #:

PMPB30XPEX-ND

Manufacturer Part#:

PMPB30XPEX

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: PMPB30XPE/SOT1220/SOT1220
More Detail:
DataSheet: PMPB30XPEX datasheetPMPB30XPEX Datasheet/PDF
Quantity: 1000
3000 +: $ 0.08069
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Series: *
Part Status: Active
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Drive Voltage (Max Rds On, Min Rds On): --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Vgs (Max): --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: --
Supplier Device Package: --
Package / Case: --
Description

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The PMPB30XPEX is a high-performance trench MOSFET from Vishay Siliconix. It is a 30 V, 175 mΩ, 100 A N-channel MOSFET that has been optimized for high efficiency and low loss. The MOSFET features a low RDS(ON) value of 175 mΩ, which makes the MOSFET well suited for high efficiency DC-DC converters, high frequency switching circuits, motor control and general purpose applications. The PMPB30XPEX is suitable for both synchronous and asynchronous buck converters.

The PMPB30XPEX MOSFET is available in a TO-263-7 (D2PAK) package. The package features a 3-pin single source side gate and a 6-pin source side drain for easy installation and thermal management. The MOSFET features a low gate charge and a low input capacitance for fast switching and improved efficiency. The MOSFETs maximum drain-source voltage (VDS) is 30 V and its maximum drain current (ID) is 100 A.

The PMPB30XPEX MOSFET has several application fields such as powering switching power converters, motor control systems, power supply systems, EMI filters, audio amplifiers and electrical relay drivers. It is also suitable for use in applications requiring low loss, high efficiency and low output ripple such as DC-DC converters and battery chargers. The MOSFET is also suitable for high-frequency switching applications due to its low gate charge.

The working principle of the PMPB30XPEX MOSFET is based on the process of generating an electric field in a semiconductor material. This electric field acts as a barrier between the source and the drain and prevents current from flowing. When a small voltage is applied to the gate terminal, the generated electric field is strong enough to allow current to flow between the source and the drain and allow the MOSFET to be turned on. The MOSFET is turned off when the gate voltage is removed, thus completely blocking the current flow.

The PMPB30XPEX MOSFET is a robust MOSFET device with a wide range of available applications. With its low RDS(ON) value, excellent thermal characteristics and low gate charge, the PMPB30XPEX is a perfect choice for applications requiring high efficiency, low input power consumption and low fee flow.

The specific data is subject to PDF, and the above content is for reference

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