PMPB33XN,115

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The PMPB33XN 115 is a polar mode field effect transistor (FET) constructed from an advanced silicon-on-insulator (SOI) process. It features a Gate-to-Source breakdown voltage of 600V, Drain-to-Source breakdown of 900V, Gate-to-Drain breakdown of 600V and a capability to withstand an avalanche energy up to 70mJ. This product is designed for general purpose use in high voltage circuits found in motor control, switching puzzles, power distribution, audio and signal processing, telecom, and other power management applications. The PMPB33XN 115 has a wide range of features and benefits including low gate charge and low on-state resistance, avalanche energy AC/DC plane, flexibility to drive wide range of loads, improved transient response and reduced power consumption.

The PMPB33XN 115 uses a field effect technology that controls current through the drain and source terminals. Basically, by controlling the electric field, leakage current can be minimized. This type of device allows for greater power efficiency and faster switching, which is essential for high speed and low power consumption power management applications. The FET’s source and gate connections are separated by an insulation layer. Controlling the source to gate voltage (Vgs) will determine the amount of current flowing from the drain to the source. If the voltage applied to the gate exceeds the breakdown voltage of the device, the transistor is considered to be ‘on’ and allows current to flow. When the gate voltage falls below the threshold voltage, the transistor turns off and no current flows.

The PMPB33XN 115 is best suited for applications that require high voltage handling capability and current transfer, such as power distribution, motor control, switching puzzles and audio/signal processing. High voltage supplies require transistors that can not only handle high voltages reliably, but that are also low power consuming. The PMPB33XN 115 is designed to meet those requirements, owing to its low gate charge and low drain source on-resistance. Furthermore, the gate-to-drain breakdown voltage of the PMPB33XN 115 is 600V and the device can withstand avalanche energy up to 70mJ, which reduces the chances of break down due to voltage spikes. Operating with a wide bias range from -2V to +14V, the PMPB33XN 115 allows for flexibility to drive a wide range of load currents.

The PMPB33XN 115 has a variety of applications in which it can be used. It can be employed in power supplies, motor control circuits, audio and signal processing, switching puzzles, telecom and other power management applications. The device’s low gate charge and drain-source on-resistance make it ideal for these types of applications. Additionally, the device’s wide bias range allows for functional flexibility. The PMPB33XN 115 can be used to create power efficient systems by reducing power consumption and improving transient response.

In conclusion, the PMPB33XN 115 polar mode field effect transistor (FET) is an ideal choice for high voltage dependent applications. Its low gate charge and low on-state resistance ensures power efficiency. The wide bias range and avalanche energy capability ensures that the device works reliably and safely. Its uses are wide ranging and its features are highly beneficial for various types of applications such as power distribution, audio/signal processing, motor control and switching puzzles. All in all, the PMPB33XN 115 is an excellent choice for power management applications.

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