PTFA041501F-V4-R250

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Transistor Type:	LDMOS
Frequency:	470MHz
Gain:	21dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	900mA
Power - Output:	150W
Voltage - Rated:	65V
Package / Case:	2-Flatpack, Fin Leads, Flanged
Supplier Device Package:	H-37248-2
Base Part Number:	PTFA041501

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

PTFA041501F-V4-R250 is a high frequency, high stability FET (or Field Effect Transistor), that belongs to the family of RF (or Radio Frequency) MOSFETs (or Metal Oxide Semiconductor Field-Effect Transistors) and is widely used in high frequency electronic equipment. In this article, we will explain the description, application field, and working principle of this RF MOSFET.

Description

PTFA041501F-V4-R250 is a high frequency, high stability MOSFET that operates on a wide range of 250 MHz up to 6.0 GHz. The model number reveals information about the various parameters of the FET. "PTF" stands for PMI (which is Portsmouth Microelectronics Inc.), "4" for 4MHz, "15" for 150V, "01" for the amplified gate capacitor and "FV4" for 4th generation FET. The maximum gate-source voltage can reach up to 35V and the drain current of 25A.

Application Field

The RF MOSFET PTFA041501F-V4-R250 is primarily used in the microwave and radio frequency sub-markets for applications such as mobile phone booster, amplifier, distributor, IF filter, and attenuator. It is also suitable for signal conditioning, signal processing, low noise amplifiers (LNA) in the fields of aviation, defense and medical electronics. The features of this FET include low power consumption, high efficiency, low noise and linear operation, making it ideal for a wide range of applications in the frequency range of 250MHz to 6.0GHz.

Working Principle

Based on the standard Metal–Oxide–Semiconductor structure, PTFA041501F-V4-R250 is an FMOSFET (Field Effect Transistor). The operating principle of this FET can be depicted with the help of this picture showing its schematic representation.There are five terminals labeled as gate (G), source (S), drain (D) and two capacitors. Gate, the controlling terminal of the FET, is the input and it is regulated by the gate-source voltage (VGS). The voltage drops between the source and the drain terminals (VDS) drives the current through the FET.When the gate-source voltage applied is sufficiently lower than the drain-source voltage, the current flow is turned off and the FET is said to be in the OFF state. When the gate-source voltage exceeds the threshold voltage (VGSth), the current starts to flow across the channel and the FET is said to be in the ON state. When the voltage increases further, the current flow reaches the maximum electric current which is limited by the RDS (on) resistance.

Conclusion

PTFA041501F-V4-R250 is a high frequency, high stability RF MOSFET that plays an important role in many high frequency circuits. This device is suitable for a wide range of applications including signal amplification, signal conditioning, signal processing, and low noise amplifiers in the frequency range of 250MHz to 6.0GHz. The working principle of this FET is based on the Metal-Oxide-Semiconductor structure and is controlled by the gate-source voltage.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description