PTFA080551E-V4-R250

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The PTFA080551E-V4-R250 is a RF MOSFET transistor from the PTFA Series. It is one of the most efficient and powerful transistors available on the market, making it an ideal choice for various applications. The device features superior performance with low on-state resistance, fast switching speed and low gate charge for excellent RF power profile.

Application Field

The PTFA080551E-V4-R250 is mainly used in RF low power system applications such as TV, radio, satellite and mobile communication. Its superior power efficiency makes it a good choice for power amplifier design, especially in the VHF and UHF bands. It is also suitable for other high frequency switches and amplifying applications. These include LNAs, mixers, oscillators, IF and RF amplifiers, and several other high-frequency circuits.

Working Principle

The working principle of the PTFA080551E-V4-R250 involves a semiconductor material such as silicon, germanium and gallium arsenide. A heavily doped region of this material forms the drain and source, which connect the gate and body of the transistor. When a controlling voltage is applied on the gate electrode, it produces an electric field that modulates the conductivity of the material between the drain and source regions. This device operates in a depletion mode where the conducting channel between the drain and source is always present and current flow is governed by the applied gate voltage. The maximum drain current of the device is limited by the current that can be handled by the gate voltage.

The device is suitable for applications that require fast switching and high performance. Its low on-state resistance (Rds) and fast switching speed enables high power handling capability in limited space. Furthermore, the device has a high output impedance, which helps the device to retain its performance in the presence of load impedance. As a result, the device can be used for high speed switching, amplifying, and low noise applications.

The PTFA080551E-V4-R250 is compliant with RoHS environmental standard and has a wide operating temperature range of -55°C to +200°C. It is one of the most durable and reliable transistors on the market and is an ideal choice for low power RF applications.

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