Allicdata Part #: | PTFA081501EV1-ND |
Manufacturer Part#: |
PTFA081501E V1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | FET RF 65V 900MHZ H-30248-2 |
More Detail: | RF Mosfet LDMOS 28V 950mA 900MHz 18dB 150W H-30248... |
DataSheet: | PTFA081501E V1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | GOLDMOS® |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 900MHz |
Gain: | 18dB |
Voltage - Test: | 28V |
Current Rating: | 10µA |
Noise Figure: | -- |
Current - Test: | 950mA |
Power - Output: | 150W |
Voltage - Rated: | 65V |
Package / Case: | 2-Flatpack, Fin Leads, Flanged |
Supplier Device Package: | H-30248-2 |
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PTFA081501E V1 is the latest transistor from a renowned manufacturer which is suitable for many different applications. It is an RF Outport which is a high-power device with up to 2.4 GHz frequency range. It is made up of a N-channel FET, an MOSFET, an HSMS package and a dielectric substrate.
The principal use of the PTFA081501E V1 is in the radio-frequency (RF) region. It is designed to operate with up to 2.4 GHz of frequency and up to 60 dB gain. It has a wide range of uses in in-home video systems and television systems, as well as in commercial radio and aerial transmissions.
The PTFA081501E V1 operates using the principle of field effect transistors (FETs). FETs have three terminals and use a thin metal oxide semiconductor (MOS) as an input device. The MOSFET is essentially a gate and is used to change the output of the FET. It is essentially a metal oxide-gate field effect transistor (MOSFET).
In order to properly use the PTFA081501E V1, the gate voltage needs to be applied to the substrate. This is done by connecting the gate to the source and the substrate to the gate. The amount of current flowing through the MOSFET is determined by the amount of voltage applied to the gate. The voltage applied to the gate determines how much current flows through the MOSFET. This is known as the gate voltage sensitivity.
In addition to changing the output of the FET, the gate voltage also affects the overall gain of the device. This is done by increasing or decreasing the capacitance at the gate. When the gate voltage is increased, the capacitance is increased resulting in an increased gain. Similarly when the gate voltage is decreased, the capacitance is reduced resulting in a decreased gain.
The PTFA081501E V1 uses electrical contact for the terminal connections. This makes it extremely easy to use, especially when used with a variety of equipment. It is also effective when used with a variety of transistors and other devices. The terminals allow for both low and high frequency signals to easily pass through.
The PTFA081501E V1 is an ideal choice for applications in the RF region. It is a powerful device with a relatively high gain that can be used with a variety of equipment and devices. It is also easy to use and is suitable for commercial radio and television systems as well as in-home video systems.
The specific data is subject to PDF, and the above content is for reference
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