PTFA072401FL-V5-R250

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The PTFA072401FL-V5-R250 is a radial leaded surface mount N-channel enhancement mode MOSFET. It’s a part of a whole family offered by Fabrinet, having this specific part as its top R(d) threshold variation range. It’s mainly used in energy efficient electronics and signal processing applications.

The PTFA072401FL-V5-R250 device was designed with the goal of optimized static and dynamic performance characteristics. The PTFA072401FL-V5-R250 has excellent gate-charge characteristics and low input capacitance, which enable faster switching speeds.

The PTFA072401FL-V5-R250 has a very low threshold voltage and gate-drain leakage current, which make it suitable for a variety of signal processing applications, such as analog and digital circuits, audio and video circuits, and radio frequency (RF) applications. It is well suited for use in high-voltage applications such as cellular phones, base station transmitters and receiver, and other typical power FM broadcast systems.

The PTFA072401FL-V5-R250 is manufactured using an advanced process technology. It has a maximum drain current rating of up to 810 mA and can be used in temperatures ranging from -55°C to + 125°C. Its power dissipation is 7.2 W with maximum lead length of 5 mm.

This MOSFET is used for a great variety of applications, such as audio and video amplifiers, level shifters, protection circuits, and pulse generators. The PTFA072401FL-V5-R250 allows designers to select the optimal combination of features for their design. This is due to its ability to be used at higher switching frequencies, facilitating faster response times and product throughput.

The PTFA072401FL-V5-R250 MOSFET performs with a maximum drain-source voltage of 20 V, an on-resistance of 25 ohms, and an operating power dissipation of 7.2 W. The device is also optimized for fast switching performance, due to its low gate-charge characteristics. This helps to minimize power losses during switch transitions and also improves circuit performance. The device is also resistant to ESD, allowing it to better survive in hostile environments.

The working principle of the PTFA072401FL-V5-R250 consists of a gate, which is connected to the drain and source of the device. When the gate potential is applied, a drain current will flow through the device since the MOSFET is an enhancement-mode device, meaning that the drain-source current will only flow if the applied gate voltage is higher than the threshold voltage. This helps to ensure that the drain-source current remains constant for a constant gate voltage, allowing for predictable performance.

The PTFA072401FL-V5-R250 MOSFET provides reliable and cost-effective solutions for a variety of medium-voltage, low-power applications. Its optimized static and dynamic performance characteristics, improved on-resistance and low gate-charge make it suitable for many applications such as audio and video amplifiers, level shifters, protection circuits, pulsers, and radio frequency transmiting/receiving applications.

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