PTFA091201E-V4-R250

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Transistor Type:	LDMOS
Frequency:	960MHz
Gain:	19dB
Voltage - Test:	28V
Current Rating:	10µA
Noise Figure:	--
Current - Test:	750mA
Power - Output:	110W
Voltage - Rated:	65V
Package / Case:	2-Flatpack, Fin Leads
Supplier Device Package:	H-36248-2
Base Part Number:	PTFA091201

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The PTFA091201E-V4-R250 is a high-power transistor that is part of a range of transistors & field effect transistors (FET), specifically those within the MOSFET - RF range. As a high-power transistor, it is suitable for a number of applications, however it is most often used in the fields of radio transmissions, and the use of high voltage RF applications.

The working principle behind this transistor is the use of a junction field effect principle. In this principle, a voltage is applied to a junction between two materials, which modulates the flow of electrons. This in turn produces a current which is then modulated across the transistor terminals, which allows for the transistor to be used as an amplifier or buffer.

Because the PTFA091201E-V4-R250 is designed for use in a high power environment, its power handling capabilities are very good. This is due to the use of an oxide layer which helps internal electrical leakage, and at the same time helps to protect the internal circuitry from thermal or physical damage. The oxidation layer ensures that the transistor can handle considerable amounts of current without any major issues.

The PTFA091201E-V4-R250 also features a relatively low input capacitance, which makes it ideal for use in noise-sensitive circuits. This low capacitance also makes it ideal for use in high-speed applications, such as data transmissions over short distances. Also, the lack of a source resistor makes the device relatively easy to use in circuits as sourced-gated transistors.

The PTFA091201E-V4-R250 is also suitable for use in Class A and Class B linear amplifiers, which means that it can handle signals with both small and large peaks. The device also includes a range of features and settings which make it easy to configure and use in custom circuitry. This includes gate biasing, gate voltage and bias control, and output level settings.

Overall, the PTFA091201E-V4-R250 is a versatile and reliable high-power transistor that is suitable for use in a wide range of applications, particularly in radio transmitters and other high voltage RF applications. With its wide range of settings and features, it is easy to configure and use in custom circuitry, and the use of an oxidation layer ensures reliable operation over time.

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