Allicdata Part #: | PTFB213004F-V2-R250-ND |
Manufacturer Part#: |
PTFB213004F-V2-R250 |
Price: | $ 83.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | IC AMP RF LDMOS |
More Detail: | RF Mosfet LDMOS 30V 2.4A 2.17GHz 18dB 60W H-37275-... |
DataSheet: | PTFB213004F-V2-R250 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 76.24610 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2.17GHz |
Gain: | 18dB |
Voltage - Test: | 30V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 2.4A |
Power - Output: | 60W |
Voltage - Rated: | 65V |
Package / Case: | H-37275-6/2 |
Supplier Device Package: | H-37275-6/2 |
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The PTFB213004F-V2-R250 is an N-channel MOSFET manufactured by Skyworks Solutions. It offers a remarkable combination of power, high speed switching tempo, low loss, and excellent thermal behavior. This component is suitable for a wide range of applications in both commercial and industrial sectors and is also used in communications systems, medical instruments, and military electronics. This component is part of the RF (Radio Frequency) category of transistors.
Application Field
The PTFB213004F-V2-R250 is ideal for high reliability, high-efficiency switching applications that involve extreme temperatures or need to function in an environment where shock, vibration, or other stress is present. Some of the most common applications of this component include high-speed switching, power switching and amplification, modulation, and power management of RF signals. It has also been used in a variety of industrial, medical, and military electronics systems. This transistor\'s outstanding performance in a wide range of temperatures and environments, combined with its low power consumption, make it the perfect choice for many demanding applications.
Working Principle
The PTFB213004F-V2-R250 works based on the principles of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). In a MOSFET, an electric field is created between the bulk material and the gate electrode by applying an electric potential difference. The electric field affects the flow of current in the channel through which current passes, thus controlling the switching of the MOSFET. In the PTFB213004F-V2-R250, this electric field is controlled by the voltage between the Gate and Source pins. By adjusting this voltage, the current in the transistor can be regulated, allowing for precise control of power, speed, and efficiency.
The PTFB213004F-V2-R250\'s impressive performance is due to its low charge-discharge times and high switching frequency. The device is also highly reliable, with lower on-resistance than comparable MOSFETS, as well as a lower temperature cycling time. Additionally, it offers excellent heat dissipation, which is critical for reliability.
Conclusion
The PTFB213004F-V2-R250 is an ideal choice for high-efficiency, high-temperature applications such as power, switching, and amplification of RF signals. It offers superior performance, low power consumption, and excellent heat dissipation in a wide range of temperatures and environments. This makes it an excellent choice for applications where reliability and efficiency are critical.
The specific data is subject to PDF, and the above content is for reference
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PTFB181702FC-V1-R250 | Cree/Wolfspe... | 48.99 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
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PTFB211503EL-V1-R0 | Cree/Wolfspe... | 59.99 $ | 1000 | IC AMP RF LDMOS H-33288-6... |
PTFB211503FL-V2-R0 | Cree/Wolfspe... | 59.99 $ | 1000 | IC AMP RF LDMOS H-34288-4... |
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