Allicdata Part #: | PTFB211503FL-V2-R0-ND |
Manufacturer Part#: |
PTFB211503FL-V2-R0 |
Price: | $ 59.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | IC AMP RF LDMOS H-34288-4 |
More Detail: | RF Mosfet LDMOS 30V 1.2A 2.17GHz 18dB 32W H-34288-... |
DataSheet: | PTFB211503FL-V2-R0 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 54.53040 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2.17GHz |
Gain: | 18dB |
Voltage - Test: | 30V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.2A |
Power - Output: | 32W |
Voltage - Rated: | 65V |
Package / Case: | 2-Flatpack, Fin Leads, Flanged |
Supplier Device Package: | H-34288-4/2 |
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PTFB211503FL-V2-R0 is a kind of field effect transistor (FET), more specifically, a radio frequency (RF) FET. It is a silicon semiconductor device which works as a switch or a voltage amplifier in many different applications. To understand the scope of its applications, an overview of its work principles will be made.
A Field effect transistor is basically a two-terminal electronic device which uses a transverse electrical field to control an electronic current between the source and the drain electrode, the gate electrode being used for controlling this electrical field. In the specific case of the PTFB211503FL-V2-R0, the source and the drain electrodes are connected to a Silicon substrate, and the gate is insulated from the substrate. To control the current flowing from source to drain, a bias voltage is applied between the gate and the source.
The exact behavior of the PTFB211503FL-V2-R0 is dependent on the bias voltage and can have three different regimes. In the cut-off and the triode regions, the transistor is in the off T-state and the current flowing from source to drain is minimal. In the saturated region the transistor is in the On-state, and the current is maximum. The bipolar nature of this transistor is used to perform both tasks of switching and amplifying. A more detailed explanation of the working principles of the PTFB211503FL-V2-R0 can be found in technical documents.
The PTFB211503FL-V2-R0 can be used for various purposes in many different fields. This RF FET is used for switching and amplifying radio signals, as well as low-power audio signals, in applications such as radio receivers, RF amplifiers, microphones and speakers. It also has applications in industrial equipment, surveillance systems and automotive electronics. The PTFB211503FL-V2-R0 is also popular in the field of communications and computing, where it is used in the construction of data communication systems and in power supplies.
In summary, the PTFB211503FL-V2-R0 is an RF FET device, with many different application areas due to its versatile properties. It has the capability of amplified or cutoff current, depending on the bias voltage, and it is widely used in various aspects, such as communications and computing, industrial equipment and audio, making this component a universal component with different applications.
The specific data is subject to PDF, and the above content is for reference
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