PTFB191501FV1R250XTMA1 Allicdata Electronics
Allicdata Part #:

PTFB191501FV1R250XTMA1TR-ND

Manufacturer Part#:

PTFB191501FV1R250XTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: FET RF LDMOS 150W H37248-2
More Detail: RF Mosfet LDMOS 30V 1.2A 1.99GHz 18dB 150W H-37248...
DataSheet: PTFB191501FV1R250XTMA1 datasheetPTFB191501FV1R250XTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.99GHz
Gain: 18dB
Voltage - Test: 30V
Current Rating: --
Noise Figure: --
Current - Test: 1.2A
Power - Output: 150W
Voltage - Rated: 65V
Package / Case: 2-Flatpack, Fin Leads, Flanged
Supplier Device Package: H-37248-2
Base Part Number: PTFB191501
Description

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PTFB191501FV1R250XTMA1 is a type of field effect transistor (FET). Specifically, it is a radio frequency (RF) metal oxide semiconductor field effect transistor (MOSFET). This part is popularly used in a variety of high frequency and low noise applications.

The PTFB191501FV1R250XTMA1 MOSFET is an electrostatically controlled current device, as are all field effect transistors. As such, it is based on a current flow from the source, between the source and drain, and back through the source. The flow of current is controlled by the voltage applied to the gate, which alters the current flow characteristics between the source and the drain.

One thing that makes the PTFB191501FV1R250XTMA1 MOSFET unique is its versatility. It can be used for a variety of tasks, including low-noise amplifiers, low-noise switches, and low-power linear applications. It is also ideal for applications requiring low distortion and high-feedback control.

Another unique feature of the PTFB191501FV1R250XTMA1 MOSFET is its linearity. The device can operate at a wide range of supply voltages, with a large stationary region. This means that the device can be used as a linear gain device, where the output signal is proportional to the input signal.

The PTFB191501FV1R250XTMA1 MOSFET is also ideal for use in high-speed applications. This device has a relatively fast switching speed with a low resistance rate. This makes it an ideal choice for circuit switching, and for applications that require high switching speeds.

The PTFB191501FV1R250XTMA1 MOSFET is also an excellent choice for use in noise suppression applications. As the noise level is reduced, the device\'s signal-to-noise ratio is increased, resulting in better performance and increased reliability.

Finally, the PTFB191501FV1R250XTMA1 MOSFET is also a good match for use in high frequency applications. This device can support frequency operation up to frequencies of 1.5GHz. This makes it ideal for applications such as microwave and digital signal processing systems.

In conclusion, the PTFB191501FV1R250XTMA1 MOSFET is a versatile device that can be used for a variety of tasks. This includes low-noise amplifiers, low-noise switches, low-power linear applications, high-speed applications, noise suppression, and high-frequency applications. Its linearity, high speed, and low noise characteristics make it an ideal choice for many high-end applications.

The specific data is subject to PDF, and the above content is for reference

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