| Allicdata Part #: | PTFB183404E-V1-R0-ND |
| Manufacturer Part#: |
PTFB183404E-V1-R0 |
| Price: | $ 106.71 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Cree/Wolfspeed |
| Short Description: | IC AMP RF LDMOS H-36275-8 |
| More Detail: | RF Mosfet LDMOS 30V 2.6A 1.88GHz 17dB 80W H-36275-... |
| DataSheet: |  PTFB183404E-V1-R0 Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 97.00740 |
Specifications
| Series: | -- |
| Packaging: | Cut Tape (CT) |
| Part Status: | Active |
| Transistor Type: | LDMOS |
| Frequency: | 1.88GHz |
| Gain: | 17dB |
| Voltage - Test: | 30V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 2.6A |
| Power - Output: | 80W |
| Voltage - Rated: | 65V |
| Package / Case: | H-36275-8 |
| Supplier Device Package: | H-36275-8 |
Description
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PTFB183404E-V1-R0 is an RF Transistor from NXP Semiconductors. It is a high-efficiency RF transistor which is designed for applications that require reliable high-power signal amplification.
Application Field
PTFB183404E-V1-R0 is mainly used for high-power radio frequency (RF) mobile communication equipment like power amplifiers for base stations and handsets. It supports a wide range of frequencies up to 4GHz, giving strong flexibility to designers in applications such as power amplifiers and other RF solutions. It is an ultra-compact, high-gain RF transistor that is suitable for use in Push-Pull and other Class AB/B systems.Working Principle
PTFB183404E-V1-R0 is a high-gain, high-efficiency, ultra-compact RF transistor. It is a FET-type transistor which utilizes Metal-Oxide-Semiconductor Field-Effect (MOSFET) technology. The device is able to support frequencies up to 4GHz and deliver ultra-high gain with high efficiency. The device works on the principal of controlling the flow of electrons. The source connection to the device will allow the flow of electrons to the gate by utilizing an electric field. This electric field is used to control the current flow from the source to the drain, allowing the transistor to amplify or reduce the electromagnetic signal.Performance
PTFB183404E-V1-R0 offers superior performance up to 4GHz, allowing for efficient use of space with high gain and linearity. It boasts a high power rating with a drain current of 2.9A, an output power of 41.5W and 10dB of gain. The transistor also offers a high efficiency rating with a typical DC to RF conversion efficiency of 65%.Conclusion
PTFB183404E-V1-R0 is an ultra-compact, high-gain RF transistor from NXP Semiconductors, designed for applications that require high power signal amplification. It is mainly used for RF mobile communication equipment like power amplifiers for base stations and handsets, and is capable of supporting frequencies up to 4GHz. The device works on the principle of controlling the flow of electrons and offers superior performance with a high power rating and DC to RF conversion efficiency of up to 65%.The specific data is subject to PDF, and the above content is for reference
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