PTFB211503FL-V2-R250

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Introduction

The PTFB211503FL-V2-R250 is a high-performance RF power MOSFET produced using advanced power MOSFET technology.

The PTFB211503FL-V2-R250 is capable of handling very high frequencies, making it an ideal choice for applications requiring a reliable SMPS or DCDC converter solution.

Application Field and Working Principle

The PTFB211503FL-V2-R250 is designed for use in radio frequency (RF) power amplifier and switching applications, such as cellular base station transmitters, consumer electronics, and industrial radio products. The device is suitable for high-power, high voltage switching applications where precise control and switching times are essential.

The PTFB211503FL-V2-R250 is an enhancement-mode, N-channel MOSFET with a insulated-gate field-effect structure. Its source is connected to the drain and the gate is connected to the source, allowing it to function as an efficient field-effect switch. As the voltage at the gate increases, the PTFB211503FL-V2-R250 turns on, allowing current to flow between the drain and source. When the gate is reversed and the voltage decreases, the PTFB211503FL-V2-R250 turns off, inhibiting further current flow. By controlling the voltage on the gate, the device can be switched on and off very quickly, making it ideal for use in high-speed switching applications.

When used in a radio frequency power amplifier, the PTFB211503FL-V2-R250 serves as an efficient switch to control the current through the load. By applying the appropriate voltage to the gate, the device can be quickly switched on and off to control the amplification of the RF signal.

Performance

The PTFB211503FL-V2-R250 is capable of handling very high power levels, making it suitable for use in high-power applications. The device has a maximum continuous drain current of 7.2 A and a maximum drain-source voltage of 200 V. It also has a maximum gate-source voltage of +/- 20 V and a maximum on-state resistance of 0.1 Ohm.

In addition, the PTFB211503FL-V2-R250 has a high switching speed, with a turn-on time of 25 ns, a turn-off time of 16 ns, and a respond time of 33 ns. This allows the device to quickly switch between on and off states, providing fast, efficient switching performance.

Conclusion

The PTFB211503FL-V2-R250 is a high-performance RF power MOSFET capable of handling very high frequencies and power levels. Its insulated-gate field-effect structure and fast switching speeds make it an ideal choice for radio frequency power amplifier and switching applications, such as cellular base station transmitters, consumer electronics, and industrial radio products.

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