Allicdata Part #: | PTFB193404F-V1-R250-ND |
Manufacturer Part#: |
PTFB193404F-V1-R250 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | IC AMP RF LDMOS |
More Detail: | RF Mosfet LDMOS 30V 2.6A 1.99GHz 19dB 80W H-37275-... |
DataSheet: | PTFB193404F-V1-R250 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.99GHz |
Gain: | 19dB |
Voltage - Test: | 30V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 2.6A |
Power - Output: | 80W |
Voltage - Rated: | 65V |
Package / Case: | H-37275-6/2 |
Supplier Device Package: | H-37275-6/2 |
Description
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Introduction
PTFB193404F-V1-R250, also known as BB193404-V1-R250 or V1-R250 hereinafter, is a power field effect transistor (FET). It is designed specifically to serve as an RF power amplifier/switch and is widely used in wireless communication systems with demanding requirements on operation reliability, power efficiency and linearity of transmitted signals.Application Field
V1-R250 is a power FET with excellent linearity. It features low noise figure and wide band operation, supporting popular LTE, WCDMA and GSM RF bands. It finds application in high power transmitters of cell phone base stations, low power transceivers, or 802.11m /Wi-Fi RF transceivers. It can be used in a variety of other radio frequency applications, such as FM broadcasting, satellite communication and GPS navigation.Working Principle
V1-R250 relies on the field effect phenomenon of an MOSFET (metal oxide semiconductor field effect transistor). It employs a combination of insulated gate and channel along with MOS capacitances, which when subjected to varying voltage, produce current flow with basically no on-site contact or power loss. When a positive electrical charge is applied to the insulated gate, it forms an electric field in the MOS capacitance on the channel, which in turn attracts electrons from the channel source, creating what is known as a depletion region. As the number of electrons in the depressed region increase, the resistance of the channel reduces and the current flows easily through the channel, creating a low resistance path. Conversely, when the gate voltage is reversed, the electrons will be repelled and the current flow in the channel is impeded, creating a high-resistance path. By employing alternating current (AC) signal to the gate, current will repeatedly switch from high resistance to low resistance states and generate oscillations.The specific data is subject to PDF, and the above content is for reference
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