Allicdata Part #: | PTFB192503FL-V2-R0-ND |
Manufacturer Part#: |
PTFB192503FL-V2-R0 |
Price: | $ 75.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | IC AMP RF LDMOS H-34288-4 |
More Detail: | RF Mosfet LDMOS 30V 1.9A 1.99GHz 19dB 50W H-34288-... |
DataSheet: | PTFB192503FL-V2-R0 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 68.84200 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.99GHz |
Gain: | 19dB |
Voltage - Test: | 30V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.9A |
Power - Output: | 50W |
Voltage - Rated: | 65V |
Package / Case: | 2-Flatpack, Fin Leads, Flanged |
Supplier Device Package: | H-34288-4/2 |
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Introduction
PTFB192503FL-V2-R0 is a combination of two of the most commonly-used transistors, Field Effect Transistors (FETs) and Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs). This device is particularly suited for radio-frequency (RF) applications and has the unique combination of FETs and MOSFETs, allowing it to be used in a variety of applications. This article will discuss the application field of the PTFB192503FL-V2-R0 and its working principles.
Application Field
The PTFB192503FL-V2-R0 is primarily used for radio-frequency applications, thanks to its combination of FETs and MOSFETs. This makes it particularly suitable for use in various types of RF amplifier circuits and in antenna circuits. Such circuits, when placed in a device, are used to capture and amplify low-power radio signals. This allows the device to be used as a receiver or a transmitter in wireless communications. As such, the PTFB192503FL-V2-R0 is often found in wireless devices such as cell phones, GPS systems and wireless audio devices.
The device is also suitable for use in digital circuits, as it has a low on-resistance. This allows signals to be transmitted quickly and accurately, making the device well-suited for low-power digital circuits. The device can also be used in variable-speed motors for controllable speed applications.
The PTFB192503FL-V2-R0 is also suitable for use as a voltage-variable switch, as it features a high-gain on-resistance range. This makes it well-suited for power-switching applications. The device can also be used as a current-variable switch, as it features a low on-resistance range.
Working Principles
The PTFB192503FL-V2-R0 works by using both FETs and MOSFETs to control the conduction in a circuit. FETs are used to control the current flow in a circuit, while MOSFETs are used to control the voltage applied to the circuit. This device combines both of these transistors in a single package, allowing it to be used for a variety of applications.
The FETs in the device are used to control the flow of current through the device. This can be used to control the current flow in a variety of leds, transistors, and other components. The MOSFETs, on the other hand, are used to control the voltage applied to the device. This can be used to control the amount of power supplied to the device, allowing it to be used in high-power switching applications.
The PTFB192503FL-V2-R0 also has a built-in current-limiting feature, which helps to protect the device from current overloads. This feature helps to minimize potential damage to the device, providing a greater level of reliability for users.
The device also has an adjustable gate voltage range, allowing it to be used in a variety of different applications. This range is adjustable from 0.5V to 4.5V, giving the device a wide range of applications.
Conclusion
The PTFB192503FL-V2-R0 is a combination of FETs and MOSFETs, allowing it to be used in a variety of radio-frequency and digital circuits. The device has a low on-resistance and a high-gain on-resistance range, making it suitable for a wide range of applications. The device also has a current-limiting feature and an adjustable gate-voltage range, making it even more suitable for use in a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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