PTFB181702FC-V1-R250

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The PTFB181702FC-V1-R250 is a modern radio frequency (RF) field effect transistor (FET) device with applications ranging between 175 and 400 MHz. It is designed using a single P-channel discret instead of a packaged multi-gate structure to provide a smaller size, lower power consumption and better off-state impedance. Typically, this transistor device is used in linear amplifiers, analog switches, and broadband transmit and receive amplifiers, as well as mixers, and still other RF applications.

Its construction comprises a single P-channel discret device, with a dielectric substrate, source, gate and drain electrodes, and insulator layer. It is capable of blocking voltages of up to 20V and supporting junction temperatures of up to 200C. The PTFB181702FC-V1-R250 has a low power consumption of 18 mW and an exhibit noise figure of up to 4 dB at 900 MHz.

In operation, the PTFB181702FC-V1-R250 sources current for its switching operations. When the gate voltage is higher than the voltage at the source, the transistor channel forms and allows current to flow through the drain. When the gate voltage is lower than the voltage at the source, the transistor channel breaks, blocking all current flow. This makes the PTFB181702FC-V1-R250 ideal for use in applications that require accuracy and precision, such as linear amplifiers, analog switches, and broadband transmit and receive amplifiers.

The PTFB181702FC-V1-R250 is designed to meet the ever increasing demands of modern electronic designs, such as low power consumption, high off-state impedance, small packaging size, and compliance with industry standards. It is an ideal choice for those seeking a more efficient and cost-effective solution for their RF applications.

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