| Allicdata Part #: | PTFB192557SHV1R250XTMA1-ND |
| Manufacturer Part#: |
PTFB192557SHV1R250XTMA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IC FET RF LDMOS H-34288G-4/2 |
| More Detail: | RF Mosfet LDMOS 28V 1.35A 1.99GHz 19dB 60W H-34288... |
| DataSheet: |  PTFB192557SHV1R250XTMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 1.99GHz |
| Gain: | 19dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 1.35A |
| Power - Output: | 60W |
| Voltage - Rated: | 65V |
| Package / Case: | H-34288G-4/2 |
| Supplier Device Package: | H-34288G-4/2 |
Description
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PTFB192557SHV1R250XTMA1 is a type of Field Effect Transistor (FET) that is employed in radio frequency (RF) applications. FETs are unipolar devices, meaning that current flow occurs between the source and drain terminals at the same voltage level regardless of the voltage level of the gate. They are also known to provide high input impedance to the gate, making them ideal for use in RF applications.The PTFB192557SHV1R250XTMA1 is a bipolar device, meaning that the gate has two different voltage levels that affect the flow of current. It is an enhancement mode device, meaning that when a positive voltage is applied to the gate voltage, it increases the amount of current that is allowed to flow through the device. The PTFB192557SHV1R250XTMA1 is considered a high voltage device, capable of operating with supply voltages up to 250V.The PTFB192557SHV1R250XTMA1 is designed for use in RF applications where high gain, low noise, and high performance are required. It is designed for optimal performance with RF pulse applications, such as cellular telephones, microwave ovens, and satellite communications systems.The PTFB192557SHV1R250XTMA1 has a built-in protection circuit that prevents the device from over-voltage and reverse bias conditions. This protection helps to ensure that the device operates within normal parameters and provides optimal performance and reliability.The PTFB192557SHV1R250XTMA1 is a low-power device, meaning that it uses a small amount of power to operate and is capable of operating with high efficiency. The PTFB192557SHV1R250XTMA1 is also a low-cost device, making it an ideal choice for applications requiring low cost and high performance.The PTFB192557SHV1R250XTMA1 is a versatile device and can be used in a variety of applications including attenuators, low-noise switches, amplifiers, and power conversion circuits. Its high performance and low cost makes it an ideal choice for a variety of RF applications.The PTFB192557SHV1R250XTMA1 is a great choice for many RF applications. Its high performance and low cost make it an ideal choice for applications where high gain, low noise, and high performance are required. The protection circuit built into the device keeps it within the optimal operating parameters and provides reliable and optimal performance.
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