PTFB211803ELV1R0XTMA1 Allicdata Electronics
Allicdata Part #:

PTFB211803ELV1R0XTMA1-ND

Manufacturer Part#:

PTFB211803ELV1R0XTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IC AMP RF LDMOS H-33288-6
More Detail: RF Mosfet LDMOS 30V 1.3A 2.17GHz 17.5dB 40W H-3328...
DataSheet: PTFB211803ELV1R0XTMA1 datasheetPTFB211803ELV1R0XTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Strip
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 2.17GHz
Gain: 17.5dB
Voltage - Test: 30V
Current Rating: --
Noise Figure: --
Current - Test: 1.3A
Power - Output: 40W
Voltage - Rated: 65V
Package / Case: H-33288-6
Supplier Device Package: H-33288-6
Description

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PTFB211803ELV1R0XTMA1 is a product of the Mitsubishi Electric brand. It is a power MOSFET with a high power rating. This product can be used for a variety of applications due to its impressive performance characteristics.

Application Field

The PTFB211803ELV1R0XTMA1 is primarily used in RF amplifier circuits. These circuits are used to amplify/condition input signals, and they are also used to transmit information over networks. Due to its high current rating, the product can also be used in motor control and switching applications, as well as in power conversion circuits.

Working Principle

The PTFB211803ELV1R0XTMA1 is a power MOSFET that is based on the MOSFET structure. Essentially, this product is a voltage-controlled device which uses its inherent capacitance to provide the desired control for a circuit. It consists of a set of transistors connected in a series-parallel arrangement, with the gate of each transistor connected to a voltage source. When a voltage is applied to the gate of the FET, the capacitance between the gate and the channel is reduced and the current starts to flow.

The device also includes a drain, which is the output of the device. The output current is controlled by the gate voltage and is used to drive the load. It also has a source which is the input of the device, and it receives the input voltage/signal.

The PTFB211803ELV1R0XTMA1 can be used either as a voltage regulator, where the output voltage is equal to the gate voltage, or as a switch, where the output voltage is either on or off. It is also possible to use the FET in both modes simultaneously, allowing for very precise control of the output signal.

Conclusion

The PTFB211803ELV1R0XTMA1 is a power MOSFET which is suitable for a variety of RF amplifier circuits, motor control applications and power conversion circuits. It works by using the capacitance between its gate and the channel to control the output current. It can be used as both a voltage regulator and a switch, allowing for precise control of the output signal.

The specific data is subject to PDF, and the above content is for reference

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