PTFB241402F-V1-R250

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Transistor Type:	LDMOS (Dual)
Frequency:	2.4GHz
Gain:	17dB
Voltage - Test:	30V
Current Rating:	--
Noise Figure:	--
Current - Test:	120mA
Power - Output:	110W
Voltage - Rated:	65V
Package / Case:	H-37248-4
Supplier Device Package:	H-37248-4

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PTFB241402F-V1-R250 is a field−effect transistor (FET) specifically designed for radio frequency (RF) applications. It is composed of three components − a gate, a source and a drain. The gate is the control element of the transistor, as it is the portion of the transistor that controls the flow of current between the source and the drain. The source and drain are the two electrodes through which current flows when the gate is activated.PTFB241402F-V1-R250 is a device developed to handle high-frequency RF signals. This type of FET is particularly useful for such high-frequency applications due to its low capacitance between gate and source and gate and drain. This low capacitance allows for faster response times and improved signal fidelity. There are two types of PTFB241402F-V1-R250 FETs, N-channel and P-channel. N-channel FETs are designed for use in high-frequency amplification applications, while P-channel FETs are designed for use in low-frequency power switching applications.The working principle of the PTFB241402F-V1-R250 is based on electron flow. When the gate is connected to a positive voltage, the electric field generated by the gate attracts electrons to the channel region between the source and the drain. This creates a conductive path in the channel region, allowing current to flow between the source and drain. Conversely, when the gate is connected to a negative voltage, the electric field created by the gate repels electrons, thus reducing the conductivity in the channel region and preventing current from flowing between the source and the drain.The PTFB241402F-V1-R250 FET is typically employed in applications such as radio-frequency amplifiers, oscillators, phase-locked loops, frequency multipliers and phase shifters. Radio-frequency amplifiers require a transistor with a high frequency response and low capacitance, which makes the PTFB241402F-V1-R250 an ideal choice for this application. Oscillators, phase-locked loops, frequency multipliers and phase shifters also require high-frequency operation, thus making the PTFB241402F-V1-R250 perfectly suited for these types of applications.Aside from its use in RF applications, the PTFB241402F-V1-R250 can be employed in a variety of other electronic circuits such as analog switches, logic level converters, multiplexers, rectifiers and active filters. Its low capacitance between the gate and source and between the gate and drain make the PTFB241402F-V1-R250 a great choice for lower-noise applications such as active filters and rectifiers. The transistor can also be used in logic-level converters where a low capacitance is required to ensure quick switching times.Overall, the PTFB241402F-V1-R250 is an excellent choice for a variety of RF applications due to its low capacitance and high frequency response. It can also be used in a variety of other electronic circuits such as analog switches, logic level converters, multiplexers, rectifiers and active filters. The PTFB241402F-V1-R250 is composed of three components − a gate, a source and a drain − which work together to control the flow of current when the gate is activated. The design and features of this transistor make it an excellent choice for a variety of low-noise applications and high-frequency switching applications.

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