R6020ENJTL Discrete Semiconductor Products |
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Allicdata Part #: | R6020ENJTLTR-ND |
Manufacturer Part#: |
R6020ENJTL |
Price: | $ 1.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 20A LPT |
More Detail: | N-Channel 600V 20A (Tc) 40W (Tc) Surface Mount LPT... |
DataSheet: | R6020ENJTL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.91501 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | LPTS (D2PAK) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 196 mOhm @ 9.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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R6020ENJTL is a transistor used in various electronic devices and circuits. It is a Single-Pack Field Effect Transistor (FET) with a built-in drain-source on-state resistance of 60 ohms and maximum drain-source on-state current of 0.2A. It can also withstand a drain-source voltage of up to 20V. This type of transistor has a wide range of applications in electronics, including power control, switching, protection, and circuit amplification. In this article, we will discuss the R6020ENJTL’s applications, working principles, and its advantages.
Applications
The R6020ENJTL is mostly used in power supply circuits, high-current switching, and electronics protection. In a power supply circuit, this type of FET can be used to control and adjust the flow of electricity with high precision. It is also widely used in switching circuits to control the flow of current by providing a stable on-state resistance with low power consumption. Moreover, it can be used in various types of electrical protection circuits where its ability to withstand high voltages makes it an ideal choice.
Working Principles
This type of transistor works on the concept of the flow of electric current through the source and the drain. It consists of three terminals, the source, drain, and gate. When the potential difference exists between the source and the drain, an electric current can flow through the circuit. By applying an electric field in the gate terminal, the electric current can be controlled. The electric field controls the on/off state of the device, allowing for precise current regulation.
The voltage applied in the gate terminal determines the on/off state. When the voltage is positive, the channel height is increased, allowing more current to flow through the channel and resulting in an on state. When the voltage is negative, the channel height is decreased, restricting the flow of current, resulting in an off state.
Advantages
The R6020ENJTL transistors are advantageous due to their low on-stateresistance, low power clamping voltage, and low power consumption. They also have higher switching speeds compared to other similar types of transistors, making them excellent for use in high-speed switching applications. Furthermore, they are affordable, have a long product life, and can be used in a wide range of electronic applications.
R6020ENJTL transistors are also known for their low hysteresis, meaning that their on/off state remains stable over a wide range of temperatures and voltages. This makes them suitable for use in environments where the temperature or voltage can vary. Furthermore, they have a higher peak current capability compared to other types of FETs.
Overall, the R6020ENJTL transistors can be used in a wide range of power control, switching, and protection applications. They are known for their low on-state resistance, low power consumption, and high peak current capability. Furthermore, they are proven to be reliable and stable over a wide range of temperatures and voltages.
The specific data is subject to PDF, and the above content is for reference
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