Allicdata Part #: | R6024KNX-ND |
Manufacturer Part#: |
R6024KNX |
Price: | $ 1.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 24A TO220FM |
More Detail: | N-Channel 600V 24A (Tc) 74W (Tc) Through Hole TO-2... |
DataSheet: | R6024KNX Datasheet/PDF |
Quantity: | 475 |
1 +: | $ 1.79550 |
10 +: | $ 1.62288 |
100 +: | $ 1.30410 |
500 +: | $ 1.01430 |
1000 +: | $ 0.84042 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 11.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
R6024KNX is a single N-channel MOSFET with excellent switch performance, low thermal resistance and wide operating temperature range. It is well-suited for both linear and switch mode applications, making it suitable for a wide range of applications in consumer, mobile, industrial and automotive markets.
R6024KNX features advanced ESD protection and built-in surface mount technology with ultra-low on-resistance, allowing it to handle high frequency operation with minimal power loss. Its low drain-source on-resistance and low body diode junction capacitance make it ideal for high-performance power management applications where fast switching speed is essential.
The working principle of the R6024KNX MOSFET is mainly based on field-effect transistor (FET) physics. When there is negative gate to source voltage, because of electrons approach to the gate, there is depletion layer created between drain and source. This depletion layer is narrower with higher reverse voltage or a higher gate voltage, leading to increased channel resistance. The channel width can be varied by changing the gate voltage, thus allowing it to act as a switch.
The R6024KNX is suitable for applications such as: DC/DC converters, motor drives, battery charging and protection, relay drivers, load switches, hard drives, gaming systems, high power audio applications, power amplifiers and power supplies.
The MOSFETs offer excellent voltage handling capabilities, enabling them to perform reliably even in extreme power conditions. It can handle large input or output voltages and quickly switch between them, thereby making it perfect for power management applications. The R6024KNX also offers high performance at a low cost, making it an ideal choice for budget-minded projects.
In addition, the R6024KNX can be used in analog and digital applications. It is widely used in digital circuits for controlling the flow of signals and power. It is also widely used in analog circuits for providing smooth and consistent signals. Because of its ability to reduce power loss and switch quickly, it is ideal for any application requiring efficient power management.
The R6024KNX MOSFET has been designed to provide reliable operation over a wide temperature range. It has a low thermal resistance, allowing it to easily maintain its performance even in extreme conditions. The low gate capacitance and low input power enable it to increase its response speed and provide a smooth, consistent output.
The R6024KNX has become an increasingly popular choice among engineers and hobbyists due to its wide range of applications, combined with its low cost and high performance. With proper design, the R6024KNX can provide reliable operation with long-term durability and efficient operation.
The specific data is subject to PDF, and the above content is for reference
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