R6024KNX Allicdata Electronics
Allicdata Part #:

R6024KNX-ND

Manufacturer Part#:

R6024KNX

Price: $ 1.98
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 600V 24A TO220FM
More Detail: N-Channel 600V 24A (Tc) 74W (Tc) Through Hole TO-2...
DataSheet: R6024KNX datasheetR6024KNX Datasheet/PDF
Quantity: 475
1 +: $ 1.79550
10 +: $ 1.62288
100 +: $ 1.30410
500 +: $ 1.01430
1000 +: $ 0.84042
Stock 475Can Ship Immediately
$ 1.98
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 74W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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R6024KNX is a single N-channel MOSFET with excellent switch performance, low thermal resistance and wide operating temperature range. It is well-suited for both linear and switch mode applications, making it suitable for a wide range of applications in consumer, mobile, industrial and automotive markets.

R6024KNX features advanced ESD protection and built-in surface mount technology with ultra-low on-resistance, allowing it to handle high frequency operation with minimal power loss. Its low drain-source on-resistance and low body diode junction capacitance make it ideal for high-performance power management applications where fast switching speed is essential.

The working principle of the R6024KNX MOSFET is mainly based on field-effect transistor (FET) physics. When there is negative gate to source voltage, because of electrons approach to the gate, there is depletion layer created between drain and source. This depletion layer is narrower with higher reverse voltage or a higher gate voltage, leading to increased channel resistance. The channel width can be varied by changing the gate voltage, thus allowing it to act as a switch.

The R6024KNX is suitable for applications such as: DC/DC converters, motor drives, battery charging and protection, relay drivers, load switches, hard drives, gaming systems, high power audio applications, power amplifiers and power supplies.

The MOSFETs offer excellent voltage handling capabilities, enabling them to perform reliably even in extreme power conditions. It can handle large input or output voltages and quickly switch between them, thereby making it perfect for power management applications. The R6024KNX also offers high performance at a low cost, making it an ideal choice for budget-minded projects.

In addition, the R6024KNX can be used in analog and digital applications. It is widely used in digital circuits for controlling the flow of signals and power. It is also widely used in analog circuits for providing smooth and consistent signals. Because of its ability to reduce power loss and switch quickly, it is ideal for any application requiring efficient power management.

The R6024KNX MOSFET has been designed to provide reliable operation over a wide temperature range. It has a low thermal resistance, allowing it to easily maintain its performance even in extreme conditions. The low gate capacitance and low input power enable it to increase its response speed and provide a smooth, consistent output.

The R6024KNX has become an increasingly popular choice among engineers and hobbyists due to its wide range of applications, combined with its low cost and high performance. With proper design, the R6024KNX can provide reliable operation with long-term durability and efficient operation.

The specific data is subject to PDF, and the above content is for reference

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