R6025ANZC8

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The R6025ANZC8 is a N-channel enhancement-mode field effect transistor (FET) used in many applications. It is a single FET device and has an encapsulated body, so it can be surface-mounted on printed circuit boards. This type of transistor is most commonly used in power management and DC power systems, as well as in other applications where a stable, low-power circuit is needed. The R6025ANZC8 operates at a voltage of 25 V and can handle a junction temperature up to 150°C.

The R6025ANZC8 is designed to be a high-efficiency device and requires minimal current to turn it on or off. It has an Output Current (I_D) of 0.3A and a Drain Source Breakdown Voltage (BV_DSS) of 25V. Furthermore, the R6025ANZC8 has a Gate-Source Voltage (V_GS) of -4V with a Gate-Source Leakage (I_GS) of 0.25µA. Its maximum Gate-Drain voltage is 30V, with a Gate-Drain Leakage (I_GD) of 0.7V.

The working principle of a FET is simple. FETs are four-terminal devices whose main terminals consist of a gate, drain and source. FETs are voltage-controlled transistors, meaning that the current passing through the channel depends on the voltage applied to the gate. When the voltage applied to the gate is zero, the device is off, blocking any current passing through the channel; when a positive voltage is applied to the gate, a channel is created and current can flow through the channel.

The R6025ANZC8 is commonly used in applications where high efficiency and low power dissipation is required. It can be found in DC power supplies, low-power motor controls, power management circuits, as well as in DC-to-DC converters. The R6025ANZC8 can also be used in analog circuits, such as in amplifiers, comparators, and voltage regulators. The device is also suited for applications where low switching losses and high voltage breakdowns are needed.

In addition to its applications, the R6025ANZC8 is also notable for its robust construction. It has an ESD rating of 8 kV, meaning that it is capable of handling electrostatic discharge. Its N-channel FET structure also allows for low input capacitance, making it suitable for use in high-speed circuit designs. The device also has a strictly controlled gate threshold voltage, allowing for improved switching performance.

Overall, the R6025ANZC8 is a versatile and robust device that can be used in a variety of applications needing efficient and low-power operation. Its voltage-controlled design makes the device suitable for high-speed circuit designs, while its robust construction makes it suitable for applications requiring high voltage breakdowns.

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