R6025FNZC8

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The R6025FNZC8 is a single N-Channel MOSFET that is used to control current and voltage in electronics systems. It is a power MOSFET, which means it can handle higher voltages and currents than regular MOSFETs. It is most commonly used in the power supply circuit, high-side switches and motor control. This tutorial will explain the application field, working principle, and features of the R6025FNZC8.

Application Field

The R6025FNZC8 is a high-side switch that can be used in switching applications. It can be used to control the current in power circuits, enabling and disabling power from the supply. It can also be used to reduce the current in circuits and protect against short-circuits. This makes it ideal for controlling motors, including those that require higher voltage and current. Furthermore, it is suitable for use in high frequency applications like DC-DC converters or switch mode power supplies.

Working Principle

The R6025FNZC8 has an N-Channel enhancement mode MOSFET. It is a three-terminal device, which means it has the source, gate, and drain terminals. The working principle of the device is simple. When a voltage is applied to the gate terminal, it generates a field effect and in turn, generates a current through the channel. This current is the drain current, which is controlled by the voltage applied to the gate terminal itself. The greater the voltage applied, the greater the drain current.

In the N-Channel enhancement mode MOSFETs, when the gate voltage is less than the threshold voltage, the drain current is zero. Once the voltage reaches or surpasses the threshold voltage, there is a rapid transition from close to zero current to its maximum drain current. This rapid current change is what makes the device ideal for high-power switching applications.

Moreover, with the R6025FNZC8, you can achieve higher efficiency since it does not produce much heat when in operation. This allows for more power to be supplied to the components and for the device to last for a longer time.

Features

The R6025FNZC8 has the following features:

• High-side switching device
• N-Channel enhancement mode MOSFET
• 2.5 volt gate threshold
• Low R_DS(on) of 6.5mΩ
• High source-drain current threshold of 97.5A
• Low input capacitance
• High maximum power dissipation
• Good frequency response characteristics

The R6025FNZC8 is perfectly suited for power circuit and high-side switching applications. Due to its low R_DS(on) and high source-drain current threshold, it is ideal for controlling the current in the circuit and providing protection against short-circuits. Its low input capacitance makes it suitable for high frequency applications such as DC-DC converters or switch mode power supplies. Furthermore, its high maximum power dissipation and good frequency response characteristics ensure that it is an efficient and reliable power device.

Conclusion

The R6025FNZC8 is a power MOSFET that is used in high-side switching applications. It has an N-Channel enhancement mode construction and has features that make it suitable for power circuits, including a low R_DS(on), high source-drain current threshold, low input capacitance, high power dissipation capabilities and good frequency response. All these features make this device ideal for powering circuits, providing protection against short-circuits and controlling motors.

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