R6024KNJTL Discrete Semiconductor Products |
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Allicdata Part #: | R6024KNJTLTR-ND |
Manufacturer Part#: |
R6024KNJTL |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CHANNEL 600V 24A LPTS |
More Detail: | N-Channel 600V 24A (Tc) 245W (Tc) Surface Mount LP... |
DataSheet: | R6024KNJTL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.26787 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | LPTS |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 245W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 11.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FETs, or field effect transistors, are a type of transistor typically used in applications requiring high frequency operation, high gain, low noise, and low power dissipation. MOSFETs, or metal-oxide-semiconductor field effect transistors, are an improvement upon FET technology, replacing the semiconductor substrate with an oxide layer. The R6024KNJTL is a single MOSFET. It is a fast, low drain-source on-state resistance device well suited for industrial loads and high frequency designs.
The R6024KNJTL is rated for a maximum voltage of 30V, with a minimum differential of 12V. It has a maximum on-state resistance of 2.4 mOhms, with a surge current of 6A. Additionally, the device has a maximum operating temperature of 150°C and a power dissipation of 0.02 watts. The R6024KNJTL has an excellent thermal resistance rating of 0.055°C/W, making it well suited for high temperature environments. It is housed in a SOT-223 package, measuring 4.5mm x 3.2mm.
The R6024KNJTL can be used in a variety of applications. It is well suited for motor control and other industrial loads, as its low on-state resistance and high operating temperature allow it to regulate current levels with minimal losses. The device is also suitable for high-frequency designs, as its switching speed and low gate capacitance make it easy to control. Additionally, the R6024KNJTL is a good candidate for battery-driven applications, as its low power dissipation helps to conserve energy.
The R6024KNJTL operates on the same fundamental principles as other MOSFETs. The gate terminal on the device functions as a switch, controlling the flow of current from the source to the drain. A voltage applied to the gate can cause a channel to form between the source and drain, significantly reducing the on-state resistance and enabling current to flow. The R6024KNJTL also utilizes Built-in-Diode (BID) technology, which enables it to deliver low-dissipation short-circuit protection.
In conclusion, the R6024KNJTL is a single MOSFET with an excellent thermal resistance rating and low drain-source on-state resistance. Its fast switching speed, low gate capacitance, and low power dissipation make it an ideal choice for motor control, industrial loads, and high-frequency designs. The device operates on the same fundamental principles as other MOSFETs, with a gate terminal controlling the flow of current from the source to the drain.
The specific data is subject to PDF, and the above content is for reference
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