Allicdata Part #: | R6020KNX-ND |
Manufacturer Part#: |
R6020KNX |
Price: | $ 1.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 20A TO220FM |
More Detail: | N-Channel 600V 20A (Tc) 68W (Tc) Through Hole TO-2... |
DataSheet: | R6020KNX Datasheet/PDF |
Quantity: | 133 |
1 +: | $ 1.79550 |
10 +: | $ 1.62288 |
100 +: | $ 1.30410 |
500 +: | $ 1.01430 |
1000 +: | $ 0.84042 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 68W (Tc) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 1550pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 196 mOhm @ 9.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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R6020KNX is an innovative type of field effect transistor (FET) and a single MOSFET that has been designed for high-amplitude, high-frequency switching applications. It features low on-resistance, low noise, low parasitic capacitance, high speed, and low power consumption. Additionally, it also has a low drive voltage requirement and a narrow heat sink, making it suitable for cost-effective and space-limited applications.
The working principle behind R6020KNX is based on a process that is known as charge modulation. In charge modulation, an amplifier is used for controlling the drain current in an FET by varying its input current. The output of the amplifier is then used to turn the gate, or the gate-source voltage of the FET on or off, depending on the required state. This process makes it possible for the FET to act as a switch, thereby making it suitable for high frequency and high power usage applications.
R6020KNX offers excellent performance when used in a wide variety of applications and settings. For example, it has been used in automotive lighting applications, multiplexed data networks, high-speed data conversion and transmission, and general power switch regulation. Additionally, it can be used in applications where the primary requirement is switching, such as power switching, current sensing and speed control.
R6020KNX is also featured with an ultra low on-resistance of 0.5 ohms, making it suitable for high current applications. Additionally, it has a low gate-source capacitance of 1.0pF, enabling it to operate at high frequency with a low power dissipation. Additionally, the FET also offers a low thermal resistance and excellent thermal cycling capabilities, making it suitable for harsh environmental conditions.
The R6020KNX has been designed for use in various demanding applications. In one use case, it was designed for operating temperature compensation for air conditioning systems. In this case, the FET is used for controlling the fan motor in the system when the ambient temperature changes, as well as for controlling the compressor when the system is enabled. Additionally, it has also been used for controlling the energy consumption of home appliances.
In summary, the R6020KNX is a single MOSFET that is perfect for high-amplitude and high-frequency switching applications. It features low on-resistance, low noise, low parasitic capacitance, low gate-source capacitance, high speed, and low power consumption. Additionally, it offers an ultra low on-resistance for high current applications, low thermal resistance and excellent thermal cycling capabilities, and has been designed for use in a wide variety of demanding applications. For these reasons, it is becoming increasingly popular in many different industries around the world.
The specific data is subject to PDF, and the above content is for reference
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