R6020ENX

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The R6020ENX is a n-channel low-voltage composite MOSFET (CMOS) transistor built on a silicon substrate. It is powered by the improved Trench-MOSFET process and is commonly used in 150V power driver circuits intended for high heat-dissipation duties such as motor driver circuits, solenoid driver circuits, motor control compressor driver circuits and bridge rectifier circuits.

The R6020ENX features features ultra-low on-state resistance of 0.6 Ω, high on/off ratio of 800:1, and low leakage current of 1.5 μA, integrating high level cells. It assures the cost effective design, excellent thermal properties and lower MOSFET losses. In addition, this high performance CMOS technology maximizes the power-on current handling capability of the device, which helps provide clean and efficient power supply.

Working principle

The R6020ENX is composed of three main components: the source, the gate and the drain. The source is the source of the electrons, while the drain is the destination or release point. The gate is the control element that controls the movement of the electrons by controlling the conductivity of the source-gate-drain path or channel. Basically, when the gate is charged, it creates a small electric field that attracts the electrons and forms a conducting channel. When the gate is discharged, the electric field is deactivated and the electrons are repelled, interrupting the current flow.

When a negative gate voltage is applied, an electric field will be created across the channel and the channel will be turned on. As the gate voltage increases, the channel current increases and the drain-source voltage decreases. This is an active channel mode and is called enhancement mode of operation. At a certain point, the channel will become saturated and the drain-source resistance will remain almost constant, despite further increase in gate voltage. This is called saturation mode.

When a positive gate voltage is applied, the channel is turned off, and no current is allowed to flow between the drain and the source. This is cut off mode. At a certain point, the gate voltage will reach its threshold and the channel will become weakly conductive. This is the punch-through mode. Through each of these modes of operation, the channel is activated and deactivated according to the voltage applied to the gate.

Application field

The R6020ENX is used in different applications, including low-voltage direct current (DC) motor drivers, LED lighting, high-power switches, low-voltage adjustable power supplies, switching regulators, and power semiconductor protection, to name a few. The R6020ENX is ideal for driving loads, such as brushed DC motors, fans, and solenoids, which require fast switchover throughout their operation.

The R6020ENX also finds applications in switching power supplies, providing designers with an increased flexibility due to its fast current rating of up to 36A in continuous mode and its ability to dissipate heat quickly. As such, the R6020ENX is an ideal transistor for designing power supplies with low power losses and stable operation. Additionally, the R6020ENX is suitable for applications that require high-speed modulation, such as communication systems, control networks, and lighting systems.

The R6020ENX is also well suited for general purpose high power switches, such as grinding motors, power switches, and power supply controllers. Its high current rating and low on-state resistance make it an excellent choice for these kinds of applications, as it enables them to handle high currents without suffering from high losses.

In summary, the R6020ENX is a powerful and efficient MOSFET transistor well suited for a variety of high power applications. Its improved Trench-MOSFET technology maximizes the power-on current handling capability of the device, while its low on-state resistance and high on/off ratio offer efficient and reliable operation.

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