R6024ENZ1C9

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The R6024ENZ1C9 is a single n-channel enhancement-mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET).

The MOSFET is a three-terminal semiconductor semiconductor device which uses a volt-controlled electrical field to control the current that flows through it. It has excellent electrical characteristics and provides low noise performance with high input impedance. It is widely used in power switching applications such as motor control and power supply design, and for communications and switch circuits.

The R6024ENZ1C9 is ideal for voltage control applications in audio power control, amplifier biasing, switch mode variable voltage power supplies, and battery protection. It is also an excellent choice for switching applications in consumer electronics and computer peripherals, including laptops, desktops, and servers.

The R6024ENZ1C9 is a single-channel MOSFET, rated for 2.5A and with a drain-source voltage of 200V. It is rated for a junction-source voltage of -55V, and a RDS(ON) of 0.125 Ohms. It also has an operating temperature range of -55 to 175C.

The R6024ENZ1C9 operates in either an enhancement-mode or depletion-mode. In the enhancement-mode, the gate voltage is negative with respect to the source. This causes the current to flow from source to the drain. When the gate voltage is positive, it causes a depletion-mode, and current will not flow. This makes the device effective as a switch, limited only by the device\'s gate capacitance.

The advantage of the R6024ENZ1C9 is its low current consumption, making it ideal for use in power management applications. It is also both voltage and temperature protected, making it very reliable in extreme conditions. The device is perfect for use in current sensing applications, or as a switch for voltage control in high demanding applications.

The R6024ENZ1C9 is ideal for high reliable and low cost applications. The device can operate up to a junction temperature of 175C, and is capable of sustaining up to a drain-source voltage of 200V. It has built-in ESD protection and is designed to withstand extreme conditions.

In summary, the R6024ENZ1C9 is a single-channel MOSFET, capable of sustaining up to 2.5A of drain-source current. It has excellent electrical characteristics and provides low noise performance with high input impedance, making it ideal for high reliable and low cost applications. It is suitable for applications such as motor control, power supply design, amplifier biasing, switch mode variable voltage, and battery protection. The device is temperature and voltage protected, making it very reliable in extreme conditions.

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