Allicdata Part #: | R6020FNX-ND |
Manufacturer Part#: |
R6020FNX |
Price: | $ 5.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 20A TO-220FM |
More Detail: | N-Channel 600V 20A (Tc) 50W (Tc) Through Hole TO-2... |
DataSheet: | R6020FNX Datasheet/PDF |
Quantity: | 554 |
1 +: | $ 5.01480 |
10 +: | $ 4.51521 |
100 +: | $ 3.71272 |
500 +: | $ 3.11064 |
1000 +: | $ 2.70927 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2040pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Bulk |
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The R6020FNX is a single N-Channel enhancement mode MOSFET (system-on-chip) in a TO-220 package. It is a high voltage, heavy duty device with a low on-resistance of 0.25 ohm and an operating current of 196A. This makes the R6020FNX a useful component for applications requiring high current, low noise, and low power loss.
The R6020FNX is designed to operate in a range of supply voltages from 4-17V, which makes it suitable for a wide variety of applications. The device has two gates, an input gate and a gate on the drain. The input gate enables the MOSFET to be driven from logic level (high or low) signals, and the drain gate is used to control the drain current. This allows the R6020FNX to act as a switch, digital switch, amplifier, or voltage regulator.
The R6020FNX is also designed for digital applications, such as for use in an AC switch, or as an output driver for an adjustable voltage regulator. The device has an and an integrated bootstrap diode, allowing it to be used in a high side switch configuration. The R6020FNX has an impressive thermal dissipation capability and survival ratings, making it suitable for applications where heat dissipation is a factor.
The working principle of the R6020FNX is based on a MOSFET field-effect transistor. A MOSFET is a transistor that has three electrodes: gate, source and drain. A voltage applied to the gate forms an electric field that is strong enough to form a conducting channel between the source and drain. This allows for a change in the source-drain current flow, all the while controlling the on-output resistance, or the “on resistance” of the device. The ability to control the on-resistance of the device allows the R6020FNX to provide a highly efficient and reliable process for controlling current between the source and drain.
The R6020FNX is a great choice for applications requiring efficiency, durability, and reliability. It is suitable for applications such as switching power supplies, Lighting and motor control, Automotive applications, Solar power inverters, switch voltage regulators, power management and high power amplifier applications. The R6020FNX is a durable and reliable device, and its low on-resistance, high current capability, and low power dissipation make it the perfect choice for any high current application.
The specific data is subject to PDF, and the above content is for reference
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