R6020KNZC8

Vgs(th) (Max) @ Id:	5V @ 1mA
Package / Case:	TO-3P-3 Full Pack
Supplier Device Package:	TO-3PF
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	68W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1550pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	196 mOhm @ 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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R6020KNZC8 Application Field and Working Principle

R6020KNZC8 is a low power and high-efficiency n-channel Enhancement Mode MOSFET transistor designed to deliver efficient power performance in small packages. This FET transistor has high integration capabilities and low impedance, making it ideal for a variety of applications. This article will explain the application field of R6020KNZC8 and its basic working principle.

Application Field of R6020KNZC8

R6020KNZC8 has a variety of applications in various industries, such as automotive, consumer electronics, industrial control, power supplies, and many more. The features of R6020KNZC8 make it ideal for automotive, consumer electronics and industrial control applications.In automotive applications, the FET transistor is used for power supply control, as a switch for onboard illumination, and for controlling the ignition systems. In consumer electronics, it can be used to power a variety of devices such as mobile phones, tablets, game consoles and other electronic products, providing low current switching performance. Lastly, in industrial control, the FET transistor can be used to control and adjust the voltage levels in circuits to meet the high power requirements of a specific application.

Working Principle of R6020KNZC8

R6020KNZC8 is an enhancement-mode MOSFET transistor that operates by applying an appropriate voltage to the drain-source terminal. The voltage applied to the terminal is referred to as the "gate-source voltage". When this voltage is applied, it allows electrons to flow through the semiconductor, resulting in a drain current. The current flow is controlled by the gate voltage and the voltage applied to the drain-source terminal.The R6020KNZC8 also exhibits a low input capacitance, which is the amount of charge stored at the gate-source terminal. This ensures high switching speed, allowing the transistor to turn on and off quickly in response to changes in the voltage applied.In addition, the FET transistor has a low thermal resistance, which helps to reduce power losses, as well as reduce heat buildup. Finally, the MOSFET also has enhanced vibration tolerance, making it ideal for automotive applications.

Conclusion

R6020KNZC8 is a low power and high-efficiency n-channel Enhancement Mode MOSFET transistor. Its features make it suitable for a wide range of applications, such as automotive, consumer electronics and industrial control. Its low input capacitance ensures high switching speed, while its low thermal resistance and enhanced vibration tolerance make this FET transistor an ideal choice for efficient power performance in small packages.

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