R6020KNJTL Discrete Semiconductor Products |
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| Allicdata Part #: | R6020KNJTLTR-ND |
| Manufacturer Part#: |
R6020KNJTL |
| Price: | $ 1.22 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | NCH 600V 20A POWER MOSFET |
| More Detail: | N-Channel 600V 20A (Tc) 231W (Tc) Surface Mount TO... |
| DataSheet: |  R6020KNJTL Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 1.10559 |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 231W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1550pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 196 mOhm @ 9.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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Introduction
The R6020KNJTL is a low-current, high-frequency MOSFET which makes it ideal for use in applications where extreme speed and efficiency are critical. Its rugged construction, low gate capacitance and low on-state resistance make it especially suited to switching and signal processing in automotive, industrial and consumer electronics. This article will discuss the application field and working principles of the R6020KNJTL.
Application Fields
The R6020KNJTL is ideal for use in applications where the highest speed and efficiency are paramount. It is well-suited for use in automotive, industrial and consumer electronic systems. It is also useful in motor control, high-density power conversion and signal processing. In addition, its low on-state resistance and high-frequency capabilities make it suitable for use in audio amplifiers, high-speed communication and power switching circuits.
Working Principle
The R6020KNJTL is a low-current high-frequency MOSFET, and this is accomplished through a combination of its design and the internal construction of the device. It has a thin oxide layer that allows current to flow easily, even at high frequencies. This layer also ensures low gate capacitance, which allows the device to switch quickly between on and off states. Additionally, its low on-state resistance helps keep losses to a minimum and reduces power consumption. All of these characteristics combine to make the R6020KNJTL an optimal choice for high-speed applications.
Conclusion
The R6020KNJTL is an ideal choice for applications where high-speed, efficiency and low current are critical requirements. Its low on-state resistance, thin oxide layer, and low gate capacitance make it an excellent choice for automotive, industrial and consumer electronic systems. Its rugged construction and high-frequency capabilities also make it useful in audio amplifiers, high-speed communication and power switching circuits. These characteristics make the R6020KNJTL a powerful and versatile device for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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