R6024KNZC8

Vgs(th) (Max) @ Id:	5V @ 1mA
Package / Case:	TO-3P-3 Full Pack
Supplier Device Package:	TO-3PF
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	74W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	45nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	165 mOhm @ 11.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to R6024KNZC8

R6024KNZC8 is a single field-effect transistor (FET), also known as MOSFET. It is a four-terminal device featuring gate, drain, source, and body terminals and is designed and developed for low voltage, high performance, and low power dissipations. The R6024KNZC8 is also a part of a growing family of vertical D-MOS FETs, providing increased electrical performance for applications including computer and telecoms power management. As a vertical D-MOS FET, the device can provide superior electrical performance under a wide variety of conditions.

Overview of the Technology

The R6024KNZC8 is an N-channel, enhancement-mode, field-effect transistor with a low gate-source voltage drop and high voltage gate eddy current dissipation. The device is composed of two p-type source and drain layers and an n-type channel. When an external voltage is applied between the source and the drain, the transistor will cease to conduct. The gate voltage controls the current flow through the channel by controlling this depletion region, allowing the channel resistivity to be tuned precisely.The R6024KNZC8 operates at a low turn-on voltage of -2.5V maximum, ensuring that the device is suitable for a variety of low voltage applications including computers and telecoms power management. The device also has a high continuity and a low input capacitance, providing a very low input rise time. Additionally, the device has an extremely low on-state resistance, minimizing power dissipation. These properties make the R6024KNZC8 an ideal choice for high-performance applications requiring low-voltage power supplies.

Application Field and Working Principle of R6024KNZC8

The R6024KNZC8 is a field-effect transistor (FET) used in various applications and provides superior electrical performance to applications including computer and telecoms power management. These applications require precise control of current, and the R6024KNZC8 offers precise control with its low gate-source voltage drop and high voltage gate eddy current input protection.In its application, the R6024KNZC8 works as a switch with its output characteristics dependent on the gate voltage. When the gate is at a low voltage (below ground potential) the device is off, and when a voltage is applied to the gate, the device will turn on. The drain-source current, or the current that flows through the device, is controlled by the gate voltage. As the gate voltage increases, the current through the device increases, and vice versa.The R6024KNZC8 has two different modes of operation, linear and saturation. In linear mode, the drain-source current is proportional to the gate voltage, meaning that small adjustments to the gate voltage can result in significant changes in the drain-source current. This mode is useful in applications where precise control of the current is required, such as in power management applications. In saturation mode, the drain-source current is not proportional to the gate voltage and the device is said to be in an \'on\' or \'on\' state regardless of the gate voltage. This mode is useful for switching applications where the current needs to be maintained at a certain level until a certain point is reached, after which the device will turn off.

Conclusion

The R6024KNZC8 is a single, N-channel field-effect transistor (FET) and is designed and developed for low voltage, high performance, and low power dissipation. It operates at a low turn-on voltage and offers precise control of current with its low gate-source voltage drop and high voltage gate eddy current dissipation. It also has a low input capacitance and high continuity, allowing for a low input rise time. These properties make the R6024KNZC8 an ideal choice for high-performance applications requiring low-voltage power supplies. The device can be used in either linear or saturation mode, depending on the application.

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