RN1908(T5L,F,T) Allicdata Electronics
Allicdata Part #:

RN1908(T5LFT)TR-ND

Manufacturer Part#:

RN1908(T5L,F,T)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2NPN PREBIAS 0.2W US6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: RN1908(T5L,F,T) datasheetRN1908(T5L,F,T) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Description

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The RN1908, also known as the T5L-F-T, is a type of pre-biased bipolar array transistor that is usually used in a range of different types of applications. This type of transistor is fairly common and is often used in audio amplifiers, drivers, and also in some larger applications such as power supplies and industrial controls. Although the T5L-F-T is a pre-biased type of transistor, its applications and working principle are not much different than other regular transistors.

The T5L-F-T is a single transistor array featuring three terminals (Base, Collector and Emitter). The transistor array is arranged in three distinct groups with each group having two transistors with a common base connection. The transistors have an inherent gain of one and are pre-biased to minimize distortion. This bias often includes a resistor in series with the base connection to provide a steady state stabling signal.

The RN1908 transistor has an excellent current ultimate transfer ration (CUTR) of 270V/mA and a Base-Emitter voltage of 5.6V to 0.6V (typical). The CUTR of the Transistor is one of the main factors that makes it so attractive for a variety of applications. It has a low switching time and is able to provide excellent switching when compared to other types of transistors. It also features a minimum power dissipation die, which is an important feature for high power applications.

The RN1908 T5L-F-T is often used as an audio amplifier where its low power dissipation and excellent CUTR make audio amplification easier and more efficient. It is also used in some large power supplies, as it is able to provide good stability and control, while still providing good output power. Other applications include motor drive applications, waveform converters, industrial motor controls, and pulse transformers.

The working principle of the RN1908 is much like that of other transistors. It is a four terminal device, with the base and collector being connected to a voltage, and the emitter being connected to a collector current. This circuit is affected by the amount of base current and the current through the collector. When the collector current is increased, the base current decreases and the voltage on the base increases as a result, creating an amplified signal in the emitter.

The RN1908T5L-F-T array is an excellent choice for a variety of applications. Its excellent CUTR and low switching time, as well as its pre-biased properties make it perfect for those who need high performance and reliability. It is also an affordable option and is available from a number of online suppliers.

The specific data is subject to PDF, and the above content is for reference

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